SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device in which hydrogen beyond a hydrogen barrier such as an Al2O3film on an interlayer insulating film is suppressed when a wiring layer is formed on the interlayer insulating film which buries a ferroelectric capacitor. SOLUTION: A first interlayer...

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1. Verfasser: IZUMI TAKATOSHI
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ELECTRICITY
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creator IZUMI TAKATOSHI
description PROBLEM TO BE SOLVED: To provide a semiconductor device in which hydrogen beyond a hydrogen barrier such as an Al2O3film on an interlayer insulating film is suppressed when a wiring layer is formed on the interlayer insulating film which buries a ferroelectric capacitor. SOLUTION: A first interlayer insulating film 20 is formed on a substrate 11 to cover ferroelectric capacitors 18A, 18B, 18C and 18D by plasma CVD employing tetraethoxysilane as a material; a hydrogen barrier film 21 is formed thereon; wiring patterns 22A, 22B and 22C are formed further thereon; a second interlayer insulating film 22HD is deposited by high density plasma CVD; a sacrifice film 22PT of silicon oxide film is deposited thereon by plasma CVD employing tetraethoxysilane as a material; and then the sacrifice film 22PT is polished by chemical mechanical polishing method until the second interlayer insulating film 22HD is exposed while setting the second moisture content of the sacrifice film 22PT lower than the first moisture content of the second interlayer insulating film 22HD. COPYRIGHT: (C)2008,JPO&INPIT
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SOLUTION: A first interlayer insulating film 20 is formed on a substrate 11 to cover ferroelectric capacitors 18A, 18B, 18C and 18D by plasma CVD employing tetraethoxysilane as a material; a hydrogen barrier film 21 is formed thereon; wiring patterns 22A, 22B and 22C are formed further thereon; a second interlayer insulating film 22HD is deposited by high density plasma CVD; a sacrifice film 22PT of silicon oxide film is deposited thereon by plasma CVD employing tetraethoxysilane as a material; and then the sacrifice film 22PT is polished by chemical mechanical polishing method until the second interlayer insulating film 22HD is exposed while setting the second moisture content of the sacrifice film 22PT lower than the first moisture content of the second interlayer insulating film 22HD. 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title SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
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