SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure in which a finer stress film is precisely formed on a MOS transistor, even if the structure is miniaturized. SOLUTION: A tensile stress film 3 having no roughness is formed on an entire surface including an interlayer insulat...

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Bibliographische Detailangaben
1. Verfasser:	KUSAKABE YOSHIHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure in which a finer stress film is precisely formed on a MOS transistor, even if the structure is miniaturized. SOLUTION: A tensile stress film 3 having no roughness is formed on an entire surface including an interlayer insulating film 2 provided on source-drain regions 12, 32 and having approximately the same height as that of a gate electrode 14 (34). Then, the tensile stress film 3 in a PMOS formation region is selectively removed. A flat compressible stress film 5 is formed on the entire surface including the interlayer insulting film 2. Afterwards, the compressible stress film 5 in an NMOS formation region is selectively removed. COPYRIGHT: (C)2008,JPO&INPIT