MASK

PROBLEM TO BE SOLVED: To provide a lithography projection apparatus and a device manufacturing method, capable of compensating for or improving the effect of a thick pellicle. SOLUTION: The thick pellicle is used to calculate corrections to be applied in exposure so that the thick pellicle is allowe...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	JASPER JOHANNES CHRISTIAAN MARIA, PONGERS WILLEM RICHARD, VAN DIJCK HENDRIKUS ALPHONSUS LUDOVICUS, BOOM HERMAN, JANSEN ALBERT JOHANNES MARIA, HOFMANS GERARDUS CAROLUS JOHANNUS, BRULS RICHARD JOSEPH, WEHRENS MARTIJN GERARD DOMINIQ, UITTERDIJK TAMMO, CICILIA ORLANDO SERAPIO, DEMARTEAU MARCEL JOHANNES LOUIS MARIE, BAGGEN MARCEL KOENRAAD MARIE, LUIJTEN CARLO CORNELIS MARIA
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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