MULTI-STEP DEP-ETCH-DEP (DEPOSITION-ETCHING-DEPOSITION) HIGH-DENSITY PLASMA CHEMICAL VAPOR DEPOSITION PROCESS FOR FILLING DIELECTRIC GAP
PROBLEM TO BE SOLVED: To provide a method for forming a dielectric material in a substrate gap, using a high-density plasma. SOLUTION: The method may include a step to deposit a first portion of the dielectric material into the gap by the high-density plasma. This deposition may form a protruding st...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | PURNAWAN RIONARD YIEH ELLIE Y BLOKING JASON THOMAS LEE YOUNG S HUA ZHONG QIANG WANG ANCHUAN |
| description | PROBLEM TO BE SOLVED: To provide a method for forming a dielectric material in a substrate gap, using a high-density plasma. SOLUTION: The method may include a step to deposit a first portion of the dielectric material into the gap by the high-density plasma. This deposition may form a protruding structure that at least partially blocks the deposition of the dielectric material into the gap. The first portion of dielectric material is exposed to an etchant that contains reactive species from a mixture, including NH3and NF3. The etchant forms a solid reaction product by the protruding structure, and the solid reaction product may be removed from the substrate. A final portion of the dielectric material may be deposited in the gap by the high-density plasma. COPYRIGHT: (C)2008,JPO&INPIT |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2008182199A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2008182199A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2008182199A3</originalsourceid><addsrcrecordid>eNqNjrEKwjAQhrs4iPoOh5MOgbYu7RjStD1JmyOJglMpEifRQn0IH9tYhK4ud_99fPzcMno3J-WQWScJCklMOlGzEGAXhrboULcTxLZiM9pDjdVXbMN9AVLcNhxELRsUXMGZkzYw60BGC2ktlAGXqFRogwKlksIZFFBxWkeLW38f_ea3V9G2nJ7xw7Pz49Bf_cO_uiOlcZwlWZrkOT_8JX0A2Ug-4g</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MULTI-STEP DEP-ETCH-DEP (DEPOSITION-ETCHING-DEPOSITION) HIGH-DENSITY PLASMA CHEMICAL VAPOR DEPOSITION PROCESS FOR FILLING DIELECTRIC GAP</title><source>esp@cenet</source><creator>PURNAWAN RIONARD ; YIEH ELLIE Y ; BLOKING JASON THOMAS ; LEE YOUNG S ; HUA ZHONG QIANG ; WANG ANCHUAN</creator><creatorcontrib>PURNAWAN RIONARD ; YIEH ELLIE Y ; BLOKING JASON THOMAS ; LEE YOUNG S ; HUA ZHONG QIANG ; WANG ANCHUAN</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a method for forming a dielectric material in a substrate gap, using a high-density plasma. SOLUTION: The method may include a step to deposit a first portion of the dielectric material into the gap by the high-density plasma. This deposition may form a protruding structure that at least partially blocks the deposition of the dielectric material into the gap. The first portion of dielectric material is exposed to an etchant that contains reactive species from a mixture, including NH3and NF3. The etchant forms a solid reaction product by the protruding structure, and the solid reaction product may be removed from the substrate. A final portion of the dielectric material may be deposited in the gap by the high-density plasma. COPYRIGHT: (C)2008,JPO&INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080807&DB=EPODOC&CC=JP&NR=2008182199A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080807&DB=EPODOC&CC=JP&NR=2008182199A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PURNAWAN RIONARD</creatorcontrib><creatorcontrib>YIEH ELLIE Y</creatorcontrib><creatorcontrib>BLOKING JASON THOMAS</creatorcontrib><creatorcontrib>LEE YOUNG S</creatorcontrib><creatorcontrib>HUA ZHONG QIANG</creatorcontrib><creatorcontrib>WANG ANCHUAN</creatorcontrib><title>MULTI-STEP DEP-ETCH-DEP (DEPOSITION-ETCHING-DEPOSITION) HIGH-DENSITY PLASMA CHEMICAL VAPOR DEPOSITION PROCESS FOR FILLING DIELECTRIC GAP</title><description>PROBLEM TO BE SOLVED: To provide a method for forming a dielectric material in a substrate gap, using a high-density plasma. SOLUTION: The method may include a step to deposit a first portion of the dielectric material into the gap by the high-density plasma. This deposition may form a protruding structure that at least partially blocks the deposition of the dielectric material into the gap. The first portion of dielectric material is exposed to an etchant that contains reactive species from a mixture, including NH3and NF3. The etchant forms a solid reaction product by the protruding structure, and the solid reaction product may be removed from the substrate. A final portion of the dielectric material may be deposited in the gap by the high-density plasma. COPYRIGHT: (C)2008,JPO&INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjrEKwjAQhrs4iPoOh5MOgbYu7RjStD1JmyOJglMpEifRQn0IH9tYhK4ud_99fPzcMno3J-WQWScJCklMOlGzEGAXhrboULcTxLZiM9pDjdVXbMN9AVLcNhxELRsUXMGZkzYw60BGC2ktlAGXqFRogwKlksIZFFBxWkeLW38f_ea3V9G2nJ7xw7Pz49Bf_cO_uiOlcZwlWZrkOT_8JX0A2Ug-4g</recordid><startdate>20080807</startdate><enddate>20080807</enddate><creator>PURNAWAN RIONARD</creator><creator>YIEH ELLIE Y</creator><creator>BLOKING JASON THOMAS</creator><creator>LEE YOUNG S</creator><creator>HUA ZHONG QIANG</creator><creator>WANG ANCHUAN</creator><scope>EVB</scope></search><sort><creationdate>20080807</creationdate><title>MULTI-STEP DEP-ETCH-DEP (DEPOSITION-ETCHING-DEPOSITION) HIGH-DENSITY PLASMA CHEMICAL VAPOR DEPOSITION PROCESS FOR FILLING DIELECTRIC GAP</title><author>PURNAWAN RIONARD ; YIEH ELLIE Y ; BLOKING JASON THOMAS ; LEE YOUNG S ; HUA ZHONG QIANG ; WANG ANCHUAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2008182199A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>PURNAWAN RIONARD</creatorcontrib><creatorcontrib>YIEH ELLIE Y</creatorcontrib><creatorcontrib>BLOKING JASON THOMAS</creatorcontrib><creatorcontrib>LEE YOUNG S</creatorcontrib><creatorcontrib>HUA ZHONG QIANG</creatorcontrib><creatorcontrib>WANG ANCHUAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PURNAWAN RIONARD</au><au>YIEH ELLIE Y</au><au>BLOKING JASON THOMAS</au><au>LEE YOUNG S</au><au>HUA ZHONG QIANG</au><au>WANG ANCHUAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MULTI-STEP DEP-ETCH-DEP (DEPOSITION-ETCHING-DEPOSITION) HIGH-DENSITY PLASMA CHEMICAL VAPOR DEPOSITION PROCESS FOR FILLING DIELECTRIC GAP</title><date>2008-08-07</date><risdate>2008</risdate><abstract>PROBLEM TO BE SOLVED: To provide a method for forming a dielectric material in a substrate gap, using a high-density plasma. SOLUTION: The method may include a step to deposit a first portion of the dielectric material into the gap by the high-density plasma. This deposition may form a protruding structure that at least partially blocks the deposition of the dielectric material into the gap. The first portion of dielectric material is exposed to an etchant that contains reactive species from a mixture, including NH3and NF3. The etchant forms a solid reaction product by the protruding structure, and the solid reaction product may be removed from the substrate. A final portion of the dielectric material may be deposited in the gap by the high-density plasma. COPYRIGHT: (C)2008,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JP2008182199A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | MULTI-STEP DEP-ETCH-DEP (DEPOSITION-ETCHING-DEPOSITION) HIGH-DENSITY PLASMA CHEMICAL VAPOR DEPOSITION PROCESS FOR FILLING DIELECTRIC GAP |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T17%3A23%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=PURNAWAN%20RIONARD&rft.date=2008-08-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2008182199A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |