FILM-FORMING APPARATUS, FILM-FORMING METHOD, INSULATION FILM, DIELECTRIC FILM, PIEZOELECTRIC FILM, FERROELECTRIC FILM, PIEZOELECTRIC ELEMENT AND LIQUID DISCHARGE DEVICE
PROBLEM TO BE SOLVED: To stably form a film of high quality in a film-forming apparatus and a film-forming method using plasma. SOLUTION: In a film-forming apparatus 300 including a vacuum chamber 310 having a gas inlet for a film-forming gas G and a gas outlet, a target holder 12 disposed in the va...
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creator | FUJII TAKAMITSU |
description | PROBLEM TO BE SOLVED: To stably form a film of high quality in a film-forming apparatus and a film-forming method using plasma. SOLUTION: In a film-forming apparatus 300 including a vacuum chamber 310 having a gas inlet for a film-forming gas G and a gas outlet, a target holder 12 disposed in the vacuum chamber 310 to hold a target T, a substrate holder 11 opposed to the target holder 12 and holding a film-forming substrate B, and plasma forming portions 12, 13 generating a plasma space P between the target holder 12 and the film-forming substrate, a shield 250 is provided. The shield 250 surrounds the outer peripheral surface of the target holder 12 facing the substrate, and comprises a plurality of shield layers 250a having a gap 204 thorough which the film-forming gas G passes so as to be disposed in a noncontact state with the target T in such a manner that they are lapped with intervals to the upper and lower directions. COPYRIGHT: (C)2008,JPO&INPIT |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2008179894A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2008179894A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2008179894A3</originalsourceid><addsrcrecordid>eNqNjLsKwjAYhbs4iPoOwbmFegHbMSR_2l9yM00dXEqROIkW6kP5mBbpooM4ncN3Ps40egqUKhHGKdQFodZSR31dxeSDK_Cl4TFBXdWSejT6vceEI0hg3iEbgUU4mS8mwDnz0xuKAu0J1ZxIPNTIh-eKldQVQDgckcE8mlzaax8WY86ipQDPyiR09yb0XXsOt_Bo9nadptlql2f5lm7-kl4IfkdV</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>FILM-FORMING APPARATUS, FILM-FORMING METHOD, INSULATION FILM, DIELECTRIC FILM, PIEZOELECTRIC FILM, FERROELECTRIC FILM, PIEZOELECTRIC ELEMENT AND LIQUID DISCHARGE DEVICE</title><source>esp@cenet</source><creator>FUJII TAKAMITSU</creator><creatorcontrib>FUJII TAKAMITSU</creatorcontrib><description>PROBLEM TO BE SOLVED: To stably form a film of high quality in a film-forming apparatus and a film-forming method using plasma. SOLUTION: In a film-forming apparatus 300 including a vacuum chamber 310 having a gas inlet for a film-forming gas G and a gas outlet, a target holder 12 disposed in the vacuum chamber 310 to hold a target T, a substrate holder 11 opposed to the target holder 12 and holding a film-forming substrate B, and plasma forming portions 12, 13 generating a plasma space P between the target holder 12 and the film-forming substrate, a shield 250 is provided. The shield 250 surrounds the outer peripheral surface of the target holder 12 facing the substrate, and comprises a plurality of shield layers 250a having a gap 204 thorough which the film-forming gas G passes so as to be disposed in a noncontact state with the target T in such a manner that they are lapped with intervals to the upper and lower directions. COPYRIGHT: (C)2008,JPO&INPIT</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CORRECTION OF TYPOGRAPHICAL ERRORS ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; LINING MACHINES ; METALLURGY ; PERFORMING OPERATIONS ; PRINTING ; SELECTIVE PRINTING MECHANISMS ; STAMPS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSPORTING ; TYPEWRITERS</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080807&DB=EPODOC&CC=JP&NR=2008179894A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080807&DB=EPODOC&CC=JP&NR=2008179894A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FUJII TAKAMITSU</creatorcontrib><title>FILM-FORMING APPARATUS, FILM-FORMING METHOD, INSULATION FILM, DIELECTRIC FILM, PIEZOELECTRIC FILM, FERROELECTRIC FILM, PIEZOELECTRIC ELEMENT AND LIQUID DISCHARGE DEVICE</title><description>PROBLEM TO BE SOLVED: To stably form a film of high quality in a film-forming apparatus and a film-forming method using plasma. SOLUTION: In a film-forming apparatus 300 including a vacuum chamber 310 having a gas inlet for a film-forming gas G and a gas outlet, a target holder 12 disposed in the vacuum chamber 310 to hold a target T, a substrate holder 11 opposed to the target holder 12 and holding a film-forming substrate B, and plasma forming portions 12, 13 generating a plasma space P between the target holder 12 and the film-forming substrate, a shield 250 is provided. The shield 250 surrounds the outer peripheral surface of the target holder 12 facing the substrate, and comprises a plurality of shield layers 250a having a gap 204 thorough which the film-forming gas G passes so as to be disposed in a noncontact state with the target T in such a manner that they are lapped with intervals to the upper and lower directions. COPYRIGHT: (C)2008,JPO&INPIT</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CORRECTION OF TYPOGRAPHICAL ERRORS</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>LINING MACHINES</subject><subject>METALLURGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PRINTING</subject><subject>SELECTIVE PRINTING MECHANISMS</subject><subject>STAMPS</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSPORTING</subject><subject>TYPEWRITERS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjLsKwjAYhbs4iPoOwbmFegHbMSR_2l9yM00dXEqROIkW6kP5mBbpooM4ncN3Ps40egqUKhHGKdQFodZSR31dxeSDK_Cl4TFBXdWSejT6vceEI0hg3iEbgUU4mS8mwDnz0xuKAu0J1ZxIPNTIh-eKldQVQDgckcE8mlzaax8WY86ipQDPyiR09yb0XXsOt_Bo9nadptlql2f5lm7-kl4IfkdV</recordid><startdate>20080807</startdate><enddate>20080807</enddate><creator>FUJII TAKAMITSU</creator><scope>EVB</scope></search><sort><creationdate>20080807</creationdate><title>FILM-FORMING APPARATUS, FILM-FORMING METHOD, INSULATION FILM, DIELECTRIC FILM, PIEZOELECTRIC FILM, FERROELECTRIC FILM, PIEZOELECTRIC ELEMENT AND LIQUID DISCHARGE DEVICE</title><author>FUJII TAKAMITSU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2008179894A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CORRECTION OF TYPOGRAPHICAL ERRORS</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>LINING MACHINES</topic><topic>METALLURGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PRINTING</topic><topic>SELECTIVE PRINTING MECHANISMS</topic><topic>STAMPS</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSPORTING</topic><topic>TYPEWRITERS</topic><toplevel>online_resources</toplevel><creatorcontrib>FUJII TAKAMITSU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FUJII TAKAMITSU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FILM-FORMING APPARATUS, FILM-FORMING METHOD, INSULATION FILM, DIELECTRIC FILM, PIEZOELECTRIC FILM, FERROELECTRIC FILM, PIEZOELECTRIC ELEMENT AND LIQUID DISCHARGE DEVICE</title><date>2008-08-07</date><risdate>2008</risdate><abstract>PROBLEM TO BE SOLVED: To stably form a film of high quality in a film-forming apparatus and a film-forming method using plasma. SOLUTION: In a film-forming apparatus 300 including a vacuum chamber 310 having a gas inlet for a film-forming gas G and a gas outlet, a target holder 12 disposed in the vacuum chamber 310 to hold a target T, a substrate holder 11 opposed to the target holder 12 and holding a film-forming substrate B, and plasma forming portions 12, 13 generating a plasma space P between the target holder 12 and the film-forming substrate, a shield 250 is provided. The shield 250 surrounds the outer peripheral surface of the target holder 12 facing the substrate, and comprises a plurality of shield layers 250a having a gap 204 thorough which the film-forming gas G passes so as to be disposed in a noncontact state with the target T in such a manner that they are lapped with intervals to the upper and lower directions. COPYRIGHT: (C)2008,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CORRECTION OF TYPOGRAPHICAL ERRORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LINING MACHINES METALLURGY PERFORMING OPERATIONS PRINTING SELECTIVE PRINTING MECHANISMS STAMPS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING TYPEWRITERS |
title | FILM-FORMING APPARATUS, FILM-FORMING METHOD, INSULATION FILM, DIELECTRIC FILM, PIEZOELECTRIC FILM, FERROELECTRIC FILM, PIEZOELECTRIC ELEMENT AND LIQUID DISCHARGE DEVICE |
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