SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device in which information stored in an information holding circuit within a circuit block can be held while reducing various leak currents (sub-threshold leak current, GIDL current, gate tunnel leak current and the like) when the...
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| creator | MIZUNO HIROYUKI ITO KIYOO |
| description | PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device in which information stored in an information holding circuit within a circuit block can be held while reducing various leak currents (sub-threshold leak current, GIDL current, gate tunnel leak current and the like) when the circuit block is in a standby state, and the circuit block can be operated at high speed when the circuit block is in an active state. SOLUTION: The semiconductor integrated circuit device includes a first circuit block, a first power line and a second power line connected to the first circuit block, a first transistor for connecting the first power line and a first potential point supplying a first potential, a first driving circuit connected to a gate of the first transistor, and a second driving circuit whose driving power is greater than that of the first driving circuit. When shifting from a first state to a second state where a potential difference between the first power line and the second power line is greater than that in the first state, the first transistor is driven by the first driving circuit in a first term, and the first transistor is driven by the second driving circuit in a subsequent second term. COPYRIGHT: (C)2008,JPO&INPIT |
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SOLUTION: The semiconductor integrated circuit device includes a first circuit block, a first power line and a second power line connected to the first circuit block, a first transistor for connecting the first power line and a first potential point supplying a first potential, a first driving circuit connected to a gate of the first transistor, and a second driving circuit whose driving power is greater than that of the first driving circuit. When shifting from a first state to a second state where a potential difference between the first power line and the second power line is greater than that in the first state, the first transistor is driven by the first driving circuit in a first term, and the first transistor is driven by the second driving circuit in a subsequent second term. 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SOLUTION: The semiconductor integrated circuit device includes a first circuit block, a first power line and a second power line connected to the first circuit block, a first transistor for connecting the first power line and a first potential point supplying a first potential, a first driving circuit connected to a gate of the first transistor, and a second driving circuit whose driving power is greater than that of the first driving circuit. When shifting from a first state to a second state where a potential difference between the first power line and the second power line is greater than that in the first state, the first transistor is driven by the first driving circuit in a first term, and the first transistor is driven by the second driving circuit in a subsequent second term. 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SOLUTION: The semiconductor integrated circuit device includes a first circuit block, a first power line and a second power line connected to the first circuit block, a first transistor for connecting the first power line and a first potential point supplying a first potential, a first driving circuit connected to a gate of the first transistor, and a second driving circuit whose driving power is greater than that of the first driving circuit. When shifting from a first state to a second state where a potential difference between the first power line and the second power line is greater than that in the first state, the first transistor is driven by the first driving circuit in a first term, and the first transistor is driven by the second driving circuit in a subsequent second term. COPYRIGHT: (C)2008,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PULSE TECHNIQUE SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
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