SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing electrical connection between adjacent floating gate electrodes, and its manufacturing method. SOLUTION: The height of a polysilicon layer 4 is formed to be lower than before to be about 95[nm], and when etching a NONON fi...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	MIYAZAKI SHOICHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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