SEMICONDUCTOR RADIATION DETECTOR AND RADIATION DETECTION APPARATUS

SEMICONDUCTOR RADIATION DETECTOR AND RADIATION DETECTION APPARATUS

PROBLEM TO BE SOLVED: To provide a semiconductor radiation detector and a radiation detecting apparatus capable of preventing degradation of detecting characteristics properly. SOLUTION: A semiconductor radiation detecting apparatus 1 comprises a semi-conductor crystal 11a, using at least one of sem...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KOMINAMI SHINYA, KIYONO TOMOYUKI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASUREMENT OF NUCLEAR OR X-RADIATION
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator KOMINAMI SHINYA
KIYONO TOMOYUKI
description PROBLEM TO BE SOLVED: To provide a semiconductor radiation detector and a radiation detecting apparatus capable of preventing degradation of detecting characteristics properly. SOLUTION: A semiconductor radiation detecting apparatus 1 comprises a semi-conductor crystal 11a, using at least one of semiconductor crystal among CdTe, CdZnTe, GaAs and Tl, sandwitched between the electrodes of a cathode C and a cathode A. At least one of the electrode has a laminated structure composed of a plurality of metals, and the first layer is formed with Pt or Au and the second layer is formed with a metal having lower hardness than Pt or Au of the first layer. The second layer composed of In is formed with electroless plating method. And, metal layers are laminated on the second layer furthermore. COPYRIGHT: (C)2008,JPO&INPIT
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2008089352A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2008089352A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2008089352A3</originalsourceid><addsrcrecordid>eNrjZHAKdvX1dPb3cwl1DvEPUghydPF0DPH091NwcQ1xBQs5-rlgCINYjgEBjkGOIaHBPAysaYk5xam8UJqbQcnNNcTZQze1ID8-tbggMTk1L7Uk3ivAyMDAwsDC0tjUyNGYKEUAe3Mr-Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR RADIATION DETECTOR AND RADIATION DETECTION APPARATUS</title><source>esp@cenet</source><creator>KOMINAMI SHINYA ; KIYONO TOMOYUKI</creator><creatorcontrib>KOMINAMI SHINYA ; KIYONO TOMOYUKI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a semiconductor radiation detector and a radiation detecting apparatus capable of preventing degradation of detecting characteristics properly. SOLUTION: A semiconductor radiation detecting apparatus 1 comprises a semi-conductor crystal 11a, using at least one of semiconductor crystal among CdTe, CdZnTe, GaAs and Tl, sandwitched between the electrodes of a cathode C and a cathode A. At least one of the electrode has a laminated structure composed of a plurality of metals, and the first layer is formed with Pt or Au and the second layer is formed with a metal having lower hardness than Pt or Au of the first layer. The second layer composed of In is formed with electroless plating method. And, metal layers are laminated on the second layer furthermore. COPYRIGHT: (C)2008,JPO&amp;INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASUREMENT OF NUCLEAR OR X-RADIATION ; MEASURING ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20080417&amp;DB=EPODOC&amp;CC=JP&amp;NR=2008089352A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20080417&amp;DB=EPODOC&amp;CC=JP&amp;NR=2008089352A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KOMINAMI SHINYA</creatorcontrib><creatorcontrib>KIYONO TOMOYUKI</creatorcontrib><title>SEMICONDUCTOR RADIATION DETECTOR AND RADIATION DETECTION APPARATUS</title><description>PROBLEM TO BE SOLVED: To provide a semiconductor radiation detector and a radiation detecting apparatus capable of preventing degradation of detecting characteristics properly. SOLUTION: A semiconductor radiation detecting apparatus 1 comprises a semi-conductor crystal 11a, using at least one of semiconductor crystal among CdTe, CdZnTe, GaAs and Tl, sandwitched between the electrodes of a cathode C and a cathode A. At least one of the electrode has a laminated structure composed of a plurality of metals, and the first layer is formed with Pt or Au and the second layer is formed with a metal having lower hardness than Pt or Au of the first layer. The second layer composed of In is formed with electroless plating method. And, metal layers are laminated on the second layer furthermore. COPYRIGHT: (C)2008,JPO&amp;INPIT</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASUREMENT OF NUCLEAR OR X-RADIATION</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2008</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAKdvX1dPb3cwl1DvEPUghydPF0DPH091NwcQ1xBQs5-rlgCINYjgEBjkGOIaHBPAysaYk5xam8UJqbQcnNNcTZQze1ID8-tbggMTk1L7Uk3ivAyMDAwsDC0tjUyNGYKEUAe3Mr-Q</recordid><startdate>20080417</startdate><enddate>20080417</enddate><creator>KOMINAMI SHINYA</creator><creator>KIYONO TOMOYUKI</creator><scope>EVB</scope></search><sort><creationdate>20080417</creationdate><title>SEMICONDUCTOR RADIATION DETECTOR AND RADIATION DETECTION APPARATUS</title><author>KOMINAMI SHINYA ; KIYONO TOMOYUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2008089352A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2008</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASUREMENT OF NUCLEAR OR X-RADIATION</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>KOMINAMI SHINYA</creatorcontrib><creatorcontrib>KIYONO TOMOYUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KOMINAMI SHINYA</au><au>KIYONO TOMOYUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR RADIATION DETECTOR AND RADIATION DETECTION APPARATUS</title><date>2008-04-17</date><risdate>2008</risdate><abstract>PROBLEM TO BE SOLVED: To provide a semiconductor radiation detector and a radiation detecting apparatus capable of preventing degradation of detecting characteristics properly. SOLUTION: A semiconductor radiation detecting apparatus 1 comprises a semi-conductor crystal 11a, using at least one of semiconductor crystal among CdTe, CdZnTe, GaAs and Tl, sandwitched between the electrodes of a cathode C and a cathode A. At least one of the electrode has a laminated structure composed of a plurality of metals, and the first layer is formed with Pt or Au and the second layer is formed with a metal having lower hardness than Pt or Au of the first layer. The second layer composed of In is formed with electroless plating method. And, metal layers are laminated on the second layer furthermore. COPYRIGHT: (C)2008,JPO&amp;INPIT</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JP2008089352A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MEASUREMENT OF NUCLEAR OR X-RADIATION
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
title SEMICONDUCTOR RADIATION DETECTOR AND RADIATION DETECTION APPARATUS
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T00%3A11%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KOMINAMI%20SHINYA&rft.date=2008-04-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2008089352A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true