VACUUM DEPOSITION SYSTEM AND VACUUM DEPOSITION METHOD
PROBLEM TO BE SOLVED: To form a film of a plurality of layers on the member to be vapor-deposited in a short vapor deposition time in one film deposition chamber. SOLUTION: In a film deposition chamber 4, a material release part 11 arranged so as to be confronted with a substrate B is provided with...
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| creator | MAEHANE YOSHIYASU MATSUMOTO YUJI |
| description | PROBLEM TO BE SOLVED: To form a film of a plurality of layers on the member to be vapor-deposited in a short vapor deposition time in one film deposition chamber. SOLUTION: In a film deposition chamber 4, a material release part 11 arranged so as to be confronted with a substrate B is provided with first to third dispersion vessels 12A to 12C each having a release port for releasing materials. First and third evaporation cells 32A, 32C for evaporating materials and the first and third dispersion vessels 12A, 12C are connected via first and third stop valves 34A, 34C. Further, a plurality of second-1 to second-3 evaporation cells 32Ba to 32Bc for evaporating materials in which a temperature range between the evaporation temperature and thermal decomposition temperature of the materials is common, and the second dispersion vessel 12B are connected via second-1 to second-3 stop valves 34Ba to 34Bc, respectively. The first to third dispersion vessels 12A to 12C are provided with vessel heating apparatuses 17A to 17C for performing heating to a prescribed temperature between the evaporation temperature and thermal decomposition temperature of the materials to be released, respectively, and a shutter device 20 for selectively opening/closing the first to third release ports is provided. COPYRIGHT: (C)2008,JPO&INPIT |
| format | Patent |
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SOLUTION: In a film deposition chamber 4, a material release part 11 arranged so as to be confronted with a substrate B is provided with first to third dispersion vessels 12A to 12C each having a release port for releasing materials. First and third evaporation cells 32A, 32C for evaporating materials and the first and third dispersion vessels 12A, 12C are connected via first and third stop valves 34A, 34C. Further, a plurality of second-1 to second-3 evaporation cells 32Ba to 32Bc for evaporating materials in which a temperature range between the evaporation temperature and thermal decomposition temperature of the materials is common, and the second dispersion vessel 12B are connected via second-1 to second-3 stop valves 34Ba to 34Bc, respectively. The first to third dispersion vessels 12A to 12C are provided with vessel heating apparatuses 17A to 17C for performing heating to a prescribed temperature between the evaporation temperature and thermal decomposition temperature of the materials to be released, respectively, and a shutter device 20 for selectively opening/closing the first to third release ports is provided. COPYRIGHT: (C)2008,JPO&INPIT</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC HEATING ; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2008</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080403&DB=EPODOC&CC=JP&NR=2008075095A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25553,76306</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20080403&DB=EPODOC&CC=JP&NR=2008075095A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MAEHANE YOSHIYASU</creatorcontrib><creatorcontrib>MATSUMOTO YUJI</creatorcontrib><title>VACUUM DEPOSITION SYSTEM AND VACUUM DEPOSITION METHOD</title><description>PROBLEM TO BE SOLVED: To form a film of a plurality of layers on the member to be vapor-deposited in a short vapor deposition time in one film deposition chamber. SOLUTION: In a film deposition chamber 4, a material release part 11 arranged so as to be confronted with a substrate B is provided with first to third dispersion vessels 12A to 12C each having a release port for releasing materials. First and third evaporation cells 32A, 32C for evaporating materials and the first and third dispersion vessels 12A, 12C are connected via first and third stop valves 34A, 34C. Further, a plurality of second-1 to second-3 evaporation cells 32Ba to 32Bc for evaporating materials in which a temperature range between the evaporation temperature and thermal decomposition temperature of the materials is common, and the second dispersion vessel 12B are connected via second-1 to second-3 stop valves 34Ba to 34Bc, respectively. The first to third dispersion vessels 12A to 12C are provided with vessel heating apparatuses 17A to 17C for performing heating to a prescribed temperature between the evaporation temperature and thermal decomposition temperature of the materials to be released, respectively, and a shutter device 20 for selectively opening/closing the first to third release ports is provided. 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SOLUTION: In a film deposition chamber 4, a material release part 11 arranged so as to be confronted with a substrate B is provided with first to third dispersion vessels 12A to 12C each having a release port for releasing materials. First and third evaporation cells 32A, 32C for evaporating materials and the first and third dispersion vessels 12A, 12C are connected via first and third stop valves 34A, 34C. Further, a plurality of second-1 to second-3 evaporation cells 32Ba to 32Bc for evaporating materials in which a temperature range between the evaporation temperature and thermal decomposition temperature of the materials is common, and the second dispersion vessel 12B are connected via second-1 to second-3 stop valves 34Ba to 34Bc, respectively. The first to third dispersion vessels 12A to 12C are provided with vessel heating apparatuses 17A to 17C for performing heating to a prescribed temperature between the evaporation temperature and thermal decomposition temperature of the materials to be released, respectively, and a shutter device 20 for selectively opening/closing the first to third release ports is provided. COPYRIGHT: (C)2008,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | VACUUM DEPOSITION SYSTEM AND VACUUM DEPOSITION METHOD |
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