GAS HEAD, AND SEMICONDUCTOR MANUFACTURING APPARATUS

PROBLEM TO BE SOLVED: To provide a gas head 20 capable of improving the treatment efficiency and achieving uniform treatment. SOLUTION: The gas head 20 is provided with a first gas inlet port 26 for introducing a first gas; a gas ejection port 28 for ejecting a gas into a process chamber 11; and a g...

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Hauptverfasser:	HANADA NAOKI, USHIGAWA HARUNORI, YAMADA KIICHI, UEHIGASHI TOSHIMITSU, BA GINKEI, MIYAGUCHI ARINORI, UEMATSU MASANORI, HIGUCHI YASUSHI, WASHISU TOSHIYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a gas head 20 capable of improving the treatment efficiency and achieving uniform treatment. SOLUTION: The gas head 20 is provided with a first gas inlet port 26 for introducing a first gas; a gas ejection port 28 for ejecting a gas into a process chamber 11; and a gas flow path 27 for circulating the gas, from the first gas inlet port 26 to the gas ejection port 28. The flow path area of the gas flow path 27 is one that increases from the first gas inlet port 26 to the gas ejection port 28. Inside the gas flow path 27, it is desirable that an intermediate member 24, for changing the flow direction of the first gas toward the peripheral edge portion of the gas head 20, be provided. COPYRIGHT: (C)2008,JPO&INPIT