SEMICONDUCTOR STORAGE DEVICE

PROBLEM TO BE SOLVED: To surely conduct a dielectric breakdown in the case of the writing of an insulating film in an anti-fuse even when a process is fined. SOLUTION: A semiconductor storage device has the anti-fuse 18 as a storage node and a current control section connected in series with the anti-fuse 18. The current control unit is composed of a diode 17 joining an n-type well 12 having a reverse conductivity type to a p-type semiconductor substrate 11, and a p+-diffusion layer 13 having the same conductivity type as the p-type semiconductor substrate 11. The anti-fuse 18 has a structure forming an electrode 16 through the insulating film 15 on an n+- diffusion layer 14 having the reverse conductivity type to at least the p-type semiconductor substrate 11. The n+-diffusion layer 14 is connected to the n-type well 12 regarding the diode 17, and a current is controlled by the diode 17. COPYRIGHT: (C)2008,JPO&INPIT