SEMICONDUCTOR DEVICE, SOLID-STATE IMAGE PICKUP DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device having photodiodes where sensitivity can be raised and accumulation capacity can be increased; and to provide a solid-state image pickup device where the photodiodes are arranged in an array shape, and a manufacturing method of the device. SOLUTION: A second conductive first semiconductor region 11 is formed in a main face of a first conductive semiconductor substrate 10. A first conductive pixel separation region 14 is formed by passing through the first semiconductor region 11 so that it separates regions of the adjacent photodiodes PD. Second conductive second semiconductor regions 15 becoming surplus charge discharge regions are formed in the semiconductor substrate 10 in positions which are detached from the bonding face of the semiconductor substrate 10 and the first semiconductor region 11, and are deeper than the bonding face. COPYRIGHT: (C)2008,JPO&INPIT