MOLD AND MANUFACTURING METHOD OF MOLD
PROBLEM TO BE SOLVED: To provide a manufacturing method of a mold having highly precise fine pattern. SOLUTION: An oxidized film 120 is formed on the surface of a substrate 110 further a resist layer 130 on the oxidized film 120. Next the surface of resist layer 130 is irradiated with electron beam...
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creator | YUSA SATOSHI KITADA MINORU ARITSUKA YUKI ISHIKAWA MIKIO |
description | PROBLEM TO BE SOLVED: To provide a manufacturing method of a mold having highly precise fine pattern. SOLUTION: An oxidized film 120 is formed on the surface of a substrate 110 further a resist layer 130 on the oxidized film 120. Next the surface of resist layer 130 is irradiated with electron beam A and exposed (Fig.2(b)). Further, development or others are carried out and a pattern 130a is formed on the resist layer 130. Next, etching is carried out to the oxidized film 120 using the pattern 130a as a mask and a pattern forming layer 120a is formed (Fig.2(c)). A film is formed of the same material as the substrate 110 on the surface of the substrate 110 using the pattern 120a as the mask and a layer 150a and a layer 150b are formed (Fig.2(e)) after removing the pattern 130a (Fig.2(d)). The layers 150a, 150b are polished to form an uneven pattern layer 150c (Fig.2(f)). The polishing is carried out such that the uneven pattern layer 150c is in the same face. Next, the pattern 120a (Fig.2(g)) is removed. COPYRIGHT: (C)2008,JPO&INPIT |
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SOLUTION: An oxidized film 120 is formed on the surface of a substrate 110 further a resist layer 130 on the oxidized film 120. Next the surface of resist layer 130 is irradiated with electron beam A and exposed (Fig.2(b)). Further, development or others are carried out and a pattern 130a is formed on the resist layer 130. Next, etching is carried out to the oxidized film 120 using the pattern 130a as a mask and a pattern forming layer 120a is formed (Fig.2(c)). A film is formed of the same material as the substrate 110 on the surface of the substrate 110 using the pattern 120a as the mask and a layer 150a and a layer 150b are formed (Fig.2(e)) after removing the pattern 130a (Fig.2(d)). The layers 150a, 150b are polished to form an uneven pattern layer 150c (Fig.2(f)). The polishing is carried out such that the uneven pattern layer 150c is in the same face. Next, the pattern 120a (Fig.2(g)) is removed. 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SOLUTION: An oxidized film 120 is formed on the surface of a substrate 110 further a resist layer 130 on the oxidized film 120. Next the surface of resist layer 130 is irradiated with electron beam A and exposed (Fig.2(b)). Further, development or others are carried out and a pattern 130a is formed on the resist layer 130. Next, etching is carried out to the oxidized film 120 using the pattern 130a as a mask and a pattern forming layer 120a is formed (Fig.2(c)). A film is formed of the same material as the substrate 110 on the surface of the substrate 110 using the pattern 120a as the mask and a layer 150a and a layer 150b are formed (Fig.2(e)) after removing the pattern 130a (Fig.2(d)). The layers 150a, 150b are polished to form an uneven pattern layer 150c (Fig.2(f)). The polishing is carried out such that the uneven pattern layer 150c is in the same face. Next, the pattern 120a (Fig.2(g)) is removed. 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SOLUTION: An oxidized film 120 is formed on the surface of a substrate 110 further a resist layer 130 on the oxidized film 120. Next the surface of resist layer 130 is irradiated with electron beam A and exposed (Fig.2(b)). Further, development or others are carried out and a pattern 130a is formed on the resist layer 130. Next, etching is carried out to the oxidized film 120 using the pattern 130a as a mask and a pattern forming layer 120a is formed (Fig.2(c)). A film is formed of the same material as the substrate 110 on the surface of the substrate 110 using the pattern 120a as the mask and a layer 150a and a layer 150b are formed (Fig.2(e)) after removing the pattern 130a (Fig.2(d)). The layers 150a, 150b are polished to form an uneven pattern layer 150c (Fig.2(f)). The polishing is carried out such that the uneven pattern layer 150c is in the same face. Next, the pattern 120a (Fig.2(g)) is removed. COPYRIGHT: (C)2008,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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subjects | AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR SHAPING OR JOINING OF PLASTICS TRANSPORTING WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL |
title | MOLD AND MANUFACTURING METHOD OF MOLD |
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