MOLD AND MANUFACTURING METHOD OF MOLD

PROBLEM TO BE SOLVED: To provide a manufacturing method of a mold having highly precise fine pattern. SOLUTION: An oxidized film 120 is formed on the surface of a substrate 110 further a resist layer 130 on the oxidized film 120. Next the surface of resist layer 130 is irradiated with electron beam...

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Hauptverfasser: YUSA SATOSHI, KITADA MINORU, ARITSUKA YUKI, ISHIKAWA MIKIO
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creator YUSA SATOSHI
KITADA MINORU
ARITSUKA YUKI
ISHIKAWA MIKIO
description PROBLEM TO BE SOLVED: To provide a manufacturing method of a mold having highly precise fine pattern. SOLUTION: An oxidized film 120 is formed on the surface of a substrate 110 further a resist layer 130 on the oxidized film 120. Next the surface of resist layer 130 is irradiated with electron beam A and exposed (Fig.2(b)). Further, development or others are carried out and a pattern 130a is formed on the resist layer 130. Next, etching is carried out to the oxidized film 120 using the pattern 130a as a mask and a pattern forming layer 120a is formed (Fig.2(c)). A film is formed of the same material as the substrate 110 on the surface of the substrate 110 using the pattern 120a as the mask and a layer 150a and a layer 150b are formed (Fig.2(e)) after removing the pattern 130a (Fig.2(d)). The layers 150a, 150b are polished to form an uneven pattern layer 150c (Fig.2(f)). The polishing is carried out such that the uneven pattern layer 150c is in the same face. Next, the pattern 120a (Fig.2(g)) is removed. COPYRIGHT: (C)2008,JPO&INPIT
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SOLUTION: An oxidized film 120 is formed on the surface of a substrate 110 further a resist layer 130 on the oxidized film 120. Next the surface of resist layer 130 is irradiated with electron beam A and exposed (Fig.2(b)). Further, development or others are carried out and a pattern 130a is formed on the resist layer 130. Next, etching is carried out to the oxidized film 120 using the pattern 130a as a mask and a pattern forming layer 120a is formed (Fig.2(c)). A film is formed of the same material as the substrate 110 on the surface of the substrate 110 using the pattern 120a as the mask and a layer 150a and a layer 150b are formed (Fig.2(e)) after removing the pattern 130a (Fig.2(d)). The layers 150a, 150b are polished to form an uneven pattern layer 150c (Fig.2(f)). The polishing is carried out such that the uneven pattern layer 150c is in the same face. Next, the pattern 120a (Fig.2(g)) is removed. 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subjects AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PERFORMING OPERATIONS
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR
SHAPING OR JOINING OF PLASTICS
TRANSPORTING
WORKING OF PLASTICS
WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
title MOLD AND MANUFACTURING METHOD OF MOLD
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