IRIDIUM OXIDE POWDER, ITS MANUFACTURING METHOD, AND PASTE FOR FORMING THICK FILM RESISTOR USING THE SAME
PROBLEM TO BE SOLVED: To provide an iridium oxide powder having an excellent dispersibility in a paste and being capable of forming a resistor having excellent electric characteristics when a paste is obtained by using the iridium oxide powder as a conductive powder of a thick film resistor and fire...
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| creator | MAEDA TOSHITERU MAKUTA FUJIO |
| description | PROBLEM TO BE SOLVED: To provide an iridium oxide powder having an excellent dispersibility in a paste and being capable of forming a resistor having excellent electric characteristics when a paste is obtained by using the iridium oxide powder as a conductive powder of a thick film resistor and fired to form a resistor, a method for manufacturing it industrially at a low cost, and a paste for forming a thick film resistor using it. SOLUTION: The iridium oxide powder is used as a conductive powder for a paste for a thick film resistor excellent in electric characteristics, which has an average particle diameter of 30-100 nm, a structure consisting of a single phase of iridium oxide represented by chemical formula: IrO2and having a half-value width of (110) plane of 0.20-0.40° in its X-ray diffraction, and a chlorine concentration of 0.01-0.4 wt.%. COPYRIGHT: (C)2008,JPO&INPIT |
| format | Patent |
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SOLUTION: The iridium oxide powder is used as a conductive powder for a paste for a thick film resistor excellent in electric characteristics, which has an average particle diameter of 30-100 nm, a structure consisting of a single phase of iridium oxide represented by chemical formula: IrO2and having a half-value width of (110) plane of 0.20-0.40° in its X-ray diffraction, and a chlorine concentration of 0.01-0.4 wt.%. 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SOLUTION: The iridium oxide powder is used as a conductive powder for a paste for a thick film resistor excellent in electric characteristics, which has an average particle diameter of 30-100 nm, a structure consisting of a single phase of iridium oxide represented by chemical formula: IrO2and having a half-value width of (110) plane of 0.20-0.40° in its X-ray diffraction, and a chlorine concentration of 0.01-0.4 wt.%. COPYRIGHT: (C)2008,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CABLES CHEMISTRY COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F CONDUCTORS ELECTRICITY INORGANIC CHEMISTRY INSULATORS METALLURGY RESISTORS SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES |
| title | IRIDIUM OXIDE POWDER, ITS MANUFACTURING METHOD, AND PASTE FOR FORMING THICK FILM RESISTOR USING THE SAME |
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