MARKER STRUCTURE FOR LITHOGRAPHY, LITHOGRAPHIC PROJECTION DEVICE PROVIDED WITH SUCH MARKER STRUCTURE FOR LITHOGRAPHY, AND METHOD OF ALIGNING SUBSTRATE USING SUCH MARKER STRUCTURE FOR LITHOGRAPHY

PROBLEM TO BE SOLVED: To provide a marker structure that allows correction of a phase depth in such a way that negative interference within a diffraction pattern is prevented, a lithographic projection device provided with such a marker structure for lithography, and a method of aligning a substrate...

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Bibliographische Detailangaben
Hauptverfasser:	LALBAHADOERSING SANJAY, MEGENS HENRY, HINNEN PAUL CHRISTIAAN, VAN HAREN RICHARD JOHANNES FRANCISCUS, VAN DER SCHAAR MAURITS
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a marker structure that allows correction of a phase depth in such a way that negative interference within a diffraction pattern is prevented, a lithographic projection device provided with such a marker structure for lithography, and a method of aligning a substrate using such a marker structure for lithography. SOLUTION: The marker structure is characterized in that: a first structural element has a first reflecting surface on a first level; a second structural element is substantially non-reflecting; a second reflecting surface is disposed on a second level lower than the first level, wherein a separation between the first and second reflecting surfaces determines a phase depth condition for the detected light; and recesses R1, R2, R3 are provided in the second reflecting surface; thereby modifying the phase depth condition. COPYRIGHT: (C)2007,JPO&INPIT