TOUGH SHALLOW TRENCH SEPARATING STRUCTURE AND METHOD FOR FORMING SHALLOW TRENCH SEPARATING STRUCTURE
PROBLEM TO BE SOLVED: To provide a shallow trench separating structure that a dielectric material is located in voids of a material filled in the trench, and a method for forming its shallow trench separating structure concerning a semiconductor substrate. SOLUTION: In the method for forming the sha...
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| creator | RANBIA SING NANDA ARUN K ROSSI NACE |
| description | PROBLEM TO BE SOLVED: To provide a shallow trench separating structure that a dielectric material is located in voids of a material filled in the trench, and a method for forming its shallow trench separating structure concerning a semiconductor substrate. SOLUTION: In the method for forming the shallow trench separating structure 84, those voids are formed in a wet cleaning process after forming the dielectric material 56 in the trench. A conformal silicon nitride layer is formed on the substrate and in the voids. After removing the silicon nitride layer, the voids are at least partially filled with a silicon nitride material. COPYRIGHT: (C)2007,JPO&INPIT |
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SOLUTION: In the method for forming the shallow trench separating structure 84, those voids are formed in a wet cleaning process after forming the dielectric material 56 in the trench. A conformal silicon nitride layer is formed on the substrate and in the voids. After removing the silicon nitride layer, the voids are at least partially filled with a silicon nitride material. 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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | TOUGH SHALLOW TRENCH SEPARATING STRUCTURE AND METHOD FOR FORMING SHALLOW TRENCH SEPARATING STRUCTURE |
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