METHOD OF FORMING THIN FILM BY MEANS OF ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION

PROBLEM TO BE SOLVED: To provide a film of such a high quality as is conventionally unable to achieve by successively performing both atomic layer deposition and chemical vapor deposition in a single reactor. SOLUTION: The method of forming a thin film on a substrate is implemented using an upper ch...

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Bibliographische Detailangaben

Hauptverfasser:	ARAMI JIYUNICHI, JINRIKI HIROSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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