METHOD OF FORMING THIN FILM BY MEANS OF ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION

PROBLEM TO BE SOLVED: To provide a film of such a high quality as is conventionally unable to achieve by successively performing both atomic layer deposition and chemical vapor deposition in a single reactor. SOLUTION: The method of forming a thin film on a substrate is implemented using an upper chamber and a shower head that includes a lower chamber, the lower chamber being arranged on the underside of the upper chamber, while covered with the upper chamber as viewed in the axial direction of the shower head, and kept from gas communication with the upper chamber, and the method includes a step of either successively forming an atomic layer deposition (ALD) film and a chemical vapor deposition (CVD) film, or successively forming a thermal ALD film and a plasma ALD film. COPYRIGHT: (C)2007,JPO&INPIT