SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device with improved heat transfer performance, without causing degradation in insulation. SOLUTION: An aluminum oxide layer 21 is formed on part of a cooler 13 by anode oxidation, and a polyimide layer 22 is formed thereon by electrodeposition coatin...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: EHIRA ATSUSHI, TAKENAKA HATSUNA, OGAWA KAZUHIRO, OKADA YASUHIRO, UENO DAIGO
Format: Patent
Sprache:eng
Schlagworte:
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