LIQUID FOR REMOVING PHOTORESIST RESIDUE AND POLYMER RESIDUE
PROBLEM TO BE SOLVED: To provide a liquid composition for removing a photoresist residue and a polymer residue, with which the photoresist residue and an ashing residue remaining after dry etching and ashing are removed, in a manufacturing step of a semiconductor device having copper and a copper al...
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| creator | IKEGAMI KAORU OWADA HIROHISA |
| description | PROBLEM TO BE SOLVED: To provide a liquid composition for removing a photoresist residue and a polymer residue, with which the photoresist residue and an ashing residue remaining after dry etching and ashing are removed, in a manufacturing step of a semiconductor device having copper and a copper alloy comprising copper as a main component, and various low dielectric constant films. SOLUTION: The liquid for removing the residue remaining on a semiconductor substrate after dry etching and ashing treatment, in the manufacturing step of a semiconductor circuit element having copper and the copper alloy as a wiring material, is characterized by containing hydrofluoric acid and not containing any inorganic alkali except for an inorganic fluoride, any organic alkali, and any water-soluble organic amine. COPYRIGHT: (C)2007,JPO&INPIT |
| format | Patent |
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SOLUTION: The liquid for removing the residue remaining on a semiconductor substrate after dry etching and ashing treatment, in the manufacturing step of a semiconductor circuit element having copper and the copper alloy as a wiring material, is characterized by containing hydrofluoric acid and not containing any inorganic alkali except for an inorganic fluoride, any organic alkali, and any water-soluble organic amine. 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SOLUTION: The liquid for removing the residue remaining on a semiconductor substrate after dry etching and ashing treatment, in the manufacturing step of a semiconductor circuit element having copper and the copper alloy as a wiring material, is characterized by containing hydrofluoric acid and not containing any inorganic alkali except for an inorganic fluoride, any organic alkali, and any water-soluble organic amine. 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SOLUTION: The liquid for removing the residue remaining on a semiconductor substrate after dry etching and ashing treatment, in the manufacturing step of a semiconductor circuit element having copper and the copper alloy as a wiring material, is characterized by containing hydrofluoric acid and not containing any inorganic alkali except for an inorganic fluoride, any organic alkali, and any water-soluble organic amine. COPYRIGHT: (C)2007,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | LIQUID FOR REMOVING PHOTORESIST RESIDUE AND POLYMER RESIDUE |
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