SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method capable of changing a connection of a circuit by a reconstituting interconnection layer, reducing an arrangement area of a fuse element to reduce a semiconductor chip size, reducing the manufacturing step, and effic...
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| creator | SUGAI TAKAYASU SASAKI KATSURO HORIUCHI HITOSHI |
| description | PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method capable of changing a connection of a circuit by a reconstituting interconnection layer, reducing an arrangement area of a fuse element to reduce a semiconductor chip size, reducing the manufacturing step, and efficiently conducting a bail-out arrangement. SOLUTION: The semiconductor device with a preliminary circuit formed on the semiconductor chip conducts the bail-out arrangement with changing the preliminary circuit connection. The semiconductor chip and an external terminal of the semiconductor device are connected by the reconstituting interconnection layer, and the change in the connection of the preliminary circuit is conducted by changing the pattern of the reconstituting interconnection layer. The method for manufacturing the semiconductor device comprises the steps of inspecting the circuit formed with the connection of the semiconductor chip and the external terminal of the semiconductor device by the reconstituting interconnection layer, and changing the connection of the circuit determined as defects by the inspection to the preliminary circuit by changing the pattern of the reconstituting layer to conduct the bail-out. COPYRIGHT: (C)2007,JPO&INPIT |
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SOLUTION: The semiconductor device with a preliminary circuit formed on the semiconductor chip conducts the bail-out arrangement with changing the preliminary circuit connection. The semiconductor chip and an external terminal of the semiconductor device are connected by the reconstituting interconnection layer, and the change in the connection of the preliminary circuit is conducted by changing the pattern of the reconstituting interconnection layer. The method for manufacturing the semiconductor device comprises the steps of inspecting the circuit formed with the connection of the semiconductor chip and the external terminal of the semiconductor device by the reconstituting interconnection layer, and changing the connection of the circuit determined as defects by the inspection to the preliminary circuit by changing the pattern of the reconstituting layer to conduct the bail-out. 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SOLUTION: The semiconductor device with a preliminary circuit formed on the semiconductor chip conducts the bail-out arrangement with changing the preliminary circuit connection. The semiconductor chip and an external terminal of the semiconductor device are connected by the reconstituting interconnection layer, and the change in the connection of the preliminary circuit is conducted by changing the pattern of the reconstituting interconnection layer. The method for manufacturing the semiconductor device comprises the steps of inspecting the circuit formed with the connection of the semiconductor chip and the external terminal of the semiconductor device by the reconstituting interconnection layer, and changing the connection of the circuit determined as defects by the inspection to the preliminary circuit by changing the pattern of the reconstituting layer to conduct the bail-out. 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SOLUTION: The semiconductor device with a preliminary circuit formed on the semiconductor chip conducts the bail-out arrangement with changing the preliminary circuit connection. The semiconductor chip and an external terminal of the semiconductor device are connected by the reconstituting interconnection layer, and the change in the connection of the preliminary circuit is conducted by changing the pattern of the reconstituting interconnection layer. The method for manufacturing the semiconductor device comprises the steps of inspecting the circuit formed with the connection of the semiconductor chip and the external terminal of the semiconductor device by the reconstituting interconnection layer, and changing the connection of the circuit determined as defects by the inspection to the preliminary circuit by changing the pattern of the reconstituting layer to conduct the bail-out. COPYRIGHT: (C)2007,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
| title | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
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