FORMING METHOD OF DYE-SENSITIZED SEMICONDUCTOR ELECTRODE AND PHOTOELECTRIC CELL MODULE
PROBLEM TO BE SOLVED: To provide a formation method of a dye-sensitized semiconductor electrode superior in mass-producibility. SOLUTION: This is a method of forming a dye-sensitized semiconductor electrode on an electrode pattern 22 and comprises a process in which a semiconductor electrode forming...
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| description | PROBLEM TO BE SOLVED: To provide a formation method of a dye-sensitized semiconductor electrode superior in mass-producibility. SOLUTION: This is a method of forming a dye-sensitized semiconductor electrode on an electrode pattern 22 and comprises a process in which a semiconductor electrode forming mask 30a, in which a hot melt layer 8 is covered by a covering layer 4 consisting of a metal material and has an aperture 32a penetrating through the front and rear sides, is thermo-compression bonded to a substrate on which the electrode pattern 22 is formed on the surface, so that the aperture 32a and the electrode pattern 22 may be properly positioned, a process in which the semiconductor electrode material is filled into the aperture 32a, a process in which a photosensitized dye is carried on the semiconductor electrode material 34b filled in the aperture 32a, and a process in which the semiconductor electrode forming mask 30a is separated. COPYRIGHT: (C)2007,JPO&INPIT |
| format | Patent |
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SOLUTION: This is a method of forming a dye-sensitized semiconductor electrode on an electrode pattern 22 and comprises a process in which a semiconductor electrode forming mask 30a, in which a hot melt layer 8 is covered by a covering layer 4 consisting of a metal material and has an aperture 32a penetrating through the front and rear sides, is thermo-compression bonded to a substrate on which the electrode pattern 22 is formed on the surface, so that the aperture 32a and the electrode pattern 22 may be properly positioned, a process in which the semiconductor electrode material is filled into the aperture 32a, a process in which a photosensitized dye is carried on the semiconductor electrode material 34b filled in the aperture 32a, and a process in which the semiconductor electrode forming mask 30a is separated. 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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE |
| title | FORMING METHOD OF DYE-SENSITIZED SEMICONDUCTOR ELECTRODE AND PHOTOELECTRIC CELL MODULE |
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