SOLID-STATE IMAGE SENSING DEVICE
PROBLEM TO BE SOLVED: To provide a solid-state image sensing device which can prevent any erroneous operation and reduce noise by reducing the amount of undesirable incoming light other than a photodiode among incoming light. SOLUTION: In the solid-state image sensing device, light hν1is refracted a...
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creator | KAWANAKA HIROYUKI |
description | PROBLEM TO BE SOLVED: To provide a solid-state image sensing device which can prevent any erroneous operation and reduce noise by reducing the amount of undesirable incoming light other than a photodiode among incoming light. SOLUTION: In the solid-state image sensing device, light hν1is refracted at an interface (point A) between a passivation film 48 and a dielectric film 49 to be turned to the direction of an adjacent pixel signal converter 53. When a distance in an inter-plane vertical direction from the top surface of an n+-type drain region 38 to the top surface of a passivation film 48 formed at an opening area 47a on a light shielding film 47 is (h), while the shortest distance is Δx in an inter-plane horizontal direction from the endmost edge (point B) of the bottom side on a concave area as a step on the passivation film 48 to an endmost edge of a charge retention means (p-type region 37 near a source) in the adjacent pixel or a depletion layer 50, a refraction angle θ is reduced by setting a condition that satisfies an inequality:Δx2≥2ä1-(n1/n2)}h2(wherein, h/Δx≥5, and 0≤Δx≤0.6 μm) between a refractive index n1of the dielectric film 49 and a refractive index n2of the passivation film 48. COPYRIGHT: (C)2007,JPO&INPIT |
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SOLUTION: In the solid-state image sensing device, light hν1is refracted at an interface (point A) between a passivation film 48 and a dielectric film 49 to be turned to the direction of an adjacent pixel signal converter 53. When a distance in an inter-plane vertical direction from the top surface of an n+-type drain region 38 to the top surface of a passivation film 48 formed at an opening area 47a on a light shielding film 47 is (h), while the shortest distance is Δx in an inter-plane horizontal direction from the endmost edge (point B) of the bottom side on a concave area as a step on the passivation film 48 to an endmost edge of a charge retention means (p-type region 37 near a source) in the adjacent pixel or a depletion layer 50, a refraction angle θ is reduced by setting a condition that satisfies an inequality:Δx2≥2ä1-(n1/n2)}h2(wherein, h/Δx≥5, and 0≤Δx≤0.6 μm) between a refractive index n1of the dielectric film 49 and a refractive index n2of the passivation film 48. 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SOLUTION: In the solid-state image sensing device, light hν1is refracted at an interface (point A) between a passivation film 48 and a dielectric film 49 to be turned to the direction of an adjacent pixel signal converter 53. When a distance in an inter-plane vertical direction from the top surface of an n+-type drain region 38 to the top surface of a passivation film 48 formed at an opening area 47a on a light shielding film 47 is (h), while the shortest distance is Δx in an inter-plane horizontal direction from the endmost edge (point B) of the bottom side on a concave area as a step on the passivation film 48 to an endmost edge of a charge retention means (p-type region 37 near a source) in the adjacent pixel or a depletion layer 50, a refraction angle θ is reduced by setting a condition that satisfies an inequality:Δx2≥2ä1-(n1/n2)}h2(wherein, h/Δx≥5, and 0≤Δx≤0.6 μm) between a refractive index n1of the dielectric film 49 and a refractive index n2of the passivation film 48. 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SOLUTION: In the solid-state image sensing device, light hν1is refracted at an interface (point A) between a passivation film 48 and a dielectric film 49 to be turned to the direction of an adjacent pixel signal converter 53. When a distance in an inter-plane vertical direction from the top surface of an n+-type drain region 38 to the top surface of a passivation film 48 formed at an opening area 47a on a light shielding film 47 is (h), while the shortest distance is Δx in an inter-plane horizontal direction from the endmost edge (point B) of the bottom side on a concave area as a step on the passivation film 48 to an endmost edge of a charge retention means (p-type region 37 near a source) in the adjacent pixel or a depletion layer 50, a refraction angle θ is reduced by setting a condition that satisfies an inequality:Δx2≥2ä1-(n1/n2)}h2(wherein, h/Δx≥5, and 0≤Δx≤0.6 μm) between a refractive index n1of the dielectric film 49 and a refractive index n2of the passivation film 48. COPYRIGHT: (C)2007,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES |
title | SOLID-STATE IMAGE SENSING DEVICE |
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