LIQUID PHASE GROWTH METHOD
PROBLEM TO BE SOLVED: To provide a liquid phase growth method which is suitable for manufacturing a silicon carbide semiconductor device or the like. SOLUTION: The liquid phase growth method includes: a process for supplying an ionized first element in a plasma into an electroconductive solvent (A)...
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| creator | KIMURA CHIKAO |
| description | PROBLEM TO BE SOLVED: To provide a liquid phase growth method which is suitable for manufacturing a silicon carbide semiconductor device or the like. SOLUTION: The liquid phase growth method includes: a process for supplying an ionized first element in a plasma into an electroconductive solvent (A) formed on a substrate (S) by superposing a direct current on the plasma containing the ionized first element; a process for forming a solute by reacting the first element supplied into the solvent and a second element previously contained in the solvent; and a process for forming a growth layer from the solute on the surface of the substrate (S) by moving the formed solute in the solvent (A) on the basis of the temperature difference and the concentration difference of the solute, formed in the solvent. COPYRIGHT: (C)2007,JPO&INPIT |
| format | Patent |
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SOLUTION: The liquid phase growth method includes: a process for supplying an ionized first element in a plasma into an electroconductive solvent (A) formed on a substrate (S) by superposing a direct current on the plasma containing the ionized first element; a process for forming a solute by reacting the first element supplied into the solvent and a second element previously contained in the solvent; and a process for forming a growth layer from the solute on the surface of the substrate (S) by moving the formed solute in the solvent (A) on the basis of the temperature difference and the concentration difference of the solute, formed in the solvent. 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SOLUTION: The liquid phase growth method includes: a process for supplying an ionized first element in a plasma into an electroconductive solvent (A) formed on a substrate (S) by superposing a direct current on the plasma containing the ionized first element; a process for forming a solute by reacting the first element supplied into the solvent and a second element previously contained in the solvent; and a process for forming a growth layer from the solute on the surface of the substrate (S) by moving the formed solute in the solvent (A) on the basis of the temperature difference and the concentration difference of the solute, formed in the solvent. COPYRIGHT: (C)2007,JPO&INPIT</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | LIQUID PHASE GROWTH METHOD |
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