SOLID-STATE IMAGING APPARATUS, ITS MANUFACTURING METHOD, AND CAMERA

PROBLEM TO BE SOLVED: To provide a method of manufacturing a solid-state imaging apparatus capable of simultaneously forming an embedded insulating film between transfer electrodes and an antireflection film on a light receiver, the solid-state imaging apparatus of single layer-electrode structure, and a camera capable of securing withstand voltage between the transfer electrodes and improving sensitivity in the light receiver. SOLUTION: The insulating film of refractive index higher than that of a gate insulating film 11 is formed inside an opening 12a and on the transfer electrodes 12 so as to embed between the transfer electrodes 12 after the transfer electrodes 12 are formed on a substrate, and an antireflection film 15a is formed inside the opening 12a with an embedded insulating film 15b between the transfer electrodes 12 left by etching back the insulating film until the insulating film inside the opening 12a is increased to a predetermined thickness. COPYRIGHT: (C)2007,JPO&INPIT