PLASMA TREATMENT DEVICE
PROBLEM TO BE SOLVED: To provide a compact and simple plasma treatment device capable of applying plasma treatment on a substrate conveyed. SOLUTION: By selectively generating plasma between a protrusion electrode 2 arranged in the vicinity of a conveying channel C on the side of a Z direction and a...
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | ARIYAMA DAISAKU |
description | PROBLEM TO BE SOLVED: To provide a compact and simple plasma treatment device capable of applying plasma treatment on a substrate conveyed. SOLUTION: By selectively generating plasma between a protrusion electrode 2 arranged in the vicinity of a conveying channel C on the side of a Z direction and a slit electrode 3 arranged in opposition to and in the vicinity of the protrusion electrode 2 so as to pinch it 2 in an X direction, an external atmosphere of the plasma treatment head 10 can be set quasi-open near ambient pressure. With this, the substrate W need not be contained in a vacuum vessel, and can be put under plasma treatment while it is conveyed along the conveying channel C to improve treatment efficiency. Further, a structure of a device concerning vacuum extraction or the like can be simplified, and the plasma treatment head 10 is made compact in a conveying direction (an X direction) to downsize the device. COPYRIGHT: (C)2006,JPO&NCIPI |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2006252819A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2006252819A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2006252819A3</originalsourceid><addsrcrecordid>eNrjZBAP8HEM9nVUCAlydQzxdfULUXBxDfN0duVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBmZGpkYWhpaOxkQpAgAPIR_a</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PLASMA TREATMENT DEVICE</title><source>esp@cenet</source><creator>ARIYAMA DAISAKU</creator><creatorcontrib>ARIYAMA DAISAKU</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a compact and simple plasma treatment device capable of applying plasma treatment on a substrate conveyed. SOLUTION: By selectively generating plasma between a protrusion electrode 2 arranged in the vicinity of a conveying channel C on the side of a Z direction and a slit electrode 3 arranged in opposition to and in the vicinity of the protrusion electrode 2 so as to pinch it 2 in an X direction, an external atmosphere of the plasma treatment head 10 can be set quasi-open near ambient pressure. With this, the substrate W need not be contained in a vacuum vessel, and can be put under plasma treatment while it is conveyed along the conveying channel C to improve treatment efficiency. Further, a structure of a device concerning vacuum extraction or the like can be simplified, and the plasma treatment head 10 is made compact in a conveying direction (an X direction) to downsize the device. COPYRIGHT: (C)2006,JPO&NCIPI</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PLASMA TECHNIQUE ; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS ; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060921&DB=EPODOC&CC=JP&NR=2006252819A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060921&DB=EPODOC&CC=JP&NR=2006252819A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ARIYAMA DAISAKU</creatorcontrib><title>PLASMA TREATMENT DEVICE</title><description>PROBLEM TO BE SOLVED: To provide a compact and simple plasma treatment device capable of applying plasma treatment on a substrate conveyed. SOLUTION: By selectively generating plasma between a protrusion electrode 2 arranged in the vicinity of a conveying channel C on the side of a Z direction and a slit electrode 3 arranged in opposition to and in the vicinity of the protrusion electrode 2 so as to pinch it 2 in an X direction, an external atmosphere of the plasma treatment head 10 can be set quasi-open near ambient pressure. With this, the substrate W need not be contained in a vacuum vessel, and can be put under plasma treatment while it is conveyed along the conveying channel C to improve treatment efficiency. Further, a structure of a device concerning vacuum extraction or the like can be simplified, and the plasma treatment head 10 is made compact in a conveying direction (an X direction) to downsize the device. COPYRIGHT: (C)2006,JPO&NCIPI</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PLASMA TECHNIQUE</subject><subject>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</subject><subject>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAP8HEM9nVUCAlydQzxdfULUXBxDfN0duVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBmZGpkYWhpaOxkQpAgAPIR_a</recordid><startdate>20060921</startdate><enddate>20060921</enddate><creator>ARIYAMA DAISAKU</creator><scope>EVB</scope></search><sort><creationdate>20060921</creationdate><title>PLASMA TREATMENT DEVICE</title><author>ARIYAMA DAISAKU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2006252819A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2006</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PLASMA TECHNIQUE</topic><topic>PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS</topic><topic>PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>ARIYAMA DAISAKU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ARIYAMA DAISAKU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PLASMA TREATMENT DEVICE</title><date>2006-09-21</date><risdate>2006</risdate><abstract>PROBLEM TO BE SOLVED: To provide a compact and simple plasma treatment device capable of applying plasma treatment on a substrate conveyed. SOLUTION: By selectively generating plasma between a protrusion electrode 2 arranged in the vicinity of a conveying channel C on the side of a Z direction and a slit electrode 3 arranged in opposition to and in the vicinity of the protrusion electrode 2 so as to pinch it 2 in an X direction, an external atmosphere of the plasma treatment head 10 can be set quasi-open near ambient pressure. With this, the substrate W need not be contained in a vacuum vessel, and can be put under plasma treatment while it is conveyed along the conveying channel C to improve treatment efficiency. Further, a structure of a device concerning vacuum extraction or the like can be simplified, and the plasma treatment head 10 is made compact in a conveying direction (an X direction) to downsize the device. COPYRIGHT: (C)2006,JPO&NCIPI</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_JP2006252819A |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | PLASMA TREATMENT DEVICE |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T16%3A50%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ARIYAMA%20DAISAKU&rft.date=2006-09-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2006252819A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |