SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

PROBLEM TO BE SOLVED: To inexpensively manufacture a semiconductor device having copper wiring on which a MIM capacitance element is formed. SOLUTION: An additional interlayer film 26 is formed between a copper diffusion preventing film 14 on the copper wiring 22 and a lower electrode 27 of the MIM...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	MIZUMURA AKIRA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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