METHOD FOR FLATTENING SURFACE OF AlN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING AlN SINGLE CRYSTAL SUBSTRATE

PROBLEM TO BE SOLVED: To provide a method by which the surface flatness of an AlN single crystal substrate can be secured and the crystal quality can be improved. SOLUTION: When the AlN single crystal substrate is polished, alumina abrasive grains having an average particle diameter of, e.g., 0.1 μm...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NAGAI AKIYO, SHIBATA TOMOHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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