METHOD OF RELIABILITY SIMULATION OF SEMICONDUCTOR DEVICE, AND RELIABILITY SIMULATOR

PROBLEM TO BE SOLVED: To realize NBTI deterioration simulation and TDDB failure simulation which are very accurate and have wide application by creating an accurate NBTI (Negative Bias Temperature Instability) life model and TDDB (Time Dependent Dielectric Breakdown) life model and using them. SOLUT...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	KOIKE NORIO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PHYSICS SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!