METHOD OF RELIABILITY SIMULATION OF SEMICONDUCTOR DEVICE, AND RELIABILITY SIMULATOR
PROBLEM TO BE SOLVED: To realize NBTI deterioration simulation and TDDB failure simulation which are very accurate and have wide application by creating an accurate NBTI (Negative Bias Temperature Instability) life model and TDDB (Time Dependent Dielectric Breakdown) life model and using them. SOLUT...
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| creator | KOIKE NORIO |
| description | PROBLEM TO BE SOLVED: To realize NBTI deterioration simulation and TDDB failure simulation which are very accurate and have wide application by creating an accurate NBTI (Negative Bias Temperature Instability) life model and TDDB (Time Dependent Dielectric Breakdown) life model and using them. SOLUTION: When performing the reliability simulation of a semiconductor device based on the estimated value of the NBTI deterioration of a MOS transistor constituting the semiconductor device, a parameter Age which indicates an amount of accumulated NBTI stress with respect to the MOS transistor is calculated by a model expression expressed by Age=C ∫[(Ih/Area)m]dt, where Ih is a hole current in the gate insulation film of the MOS transistor, Area is a gate area of the MOS transistor, t is NBTI stress time, m is a model parameter, and C is a proportional constant. COPYRIGHT: (C)2006,JPO&NCIPI |
| format | Patent |
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SOLUTION: When performing the reliability simulation of a semiconductor device based on the estimated value of the NBTI deterioration of a MOS transistor constituting the semiconductor device, a parameter Age which indicates an amount of accumulated NBTI stress with respect to the MOS transistor is calculated by a model expression expressed by Age=C ∫[(Ih/Area)m]dt, where Ih is a hole current in the gate insulation film of the MOS transistor, Area is a gate area of the MOS transistor, t is NBTI stress time, m is a model parameter, and C is a proportional constant. COPYRIGHT: (C)2006,JPO&NCIPI</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060601&DB=EPODOC&CC=JP&NR=2006140284A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060601&DB=EPODOC&CC=JP&NR=2006140284A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KOIKE NORIO</creatorcontrib><title>METHOD OF RELIABILITY SIMULATION OF SEMICONDUCTOR DEVICE, AND RELIABILITY SIMULATOR</title><description>PROBLEM TO BE SOLVED: To realize NBTI deterioration simulation and TDDB failure simulation which are very accurate and have wide application by creating an accurate NBTI (Negative Bias Temperature Instability) life model and TDDB (Time Dependent Dielectric Breakdown) life model and using them. SOLUTION: When performing the reliability simulation of a semiconductor device based on the estimated value of the NBTI deterioration of a MOS transistor constituting the semiconductor device, a parameter Age which indicates an amount of accumulated NBTI stress with respect to the MOS transistor is calculated by a model expression expressed by Age=C ∫[(Ih/Area)m]dt, where Ih is a hole current in the gate insulation film of the MOS transistor, Area is a gate area of the MOS transistor, t is NBTI stress time, m is a model parameter, and C is a proportional constant. 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SOLUTION: When performing the reliability simulation of a semiconductor device based on the estimated value of the NBTI deterioration of a MOS transistor constituting the semiconductor device, a parameter Age which indicates an amount of accumulated NBTI stress with respect to the MOS transistor is calculated by a model expression expressed by Age=C ∫[(Ih/Area)m]dt, where Ih is a hole current in the gate insulation film of the MOS transistor, Area is a gate area of the MOS transistor, t is NBTI stress time, m is a model parameter, and C is a proportional constant. COPYRIGHT: (C)2006,JPO&NCIPI</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PHYSICS SEMICONDUCTOR DEVICES |
| title | METHOD OF RELIABILITY SIMULATION OF SEMICONDUCTOR DEVICE, AND RELIABILITY SIMULATOR |
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