SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of increasing its withstanding voltage regarding the semiconductor device with a buried oxide film between a supporting layer and an element forming layer. SOLUTION: A conductive plate 26 is brought to a floating potential in a DC, and...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KUZUHARA TAKESHI, YAMADA AKIRA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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