SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To solve a problem that leak current is generated in a source-drain region in a conventional MIS type semiconductor device having a side wall spacer of two-layered structure, the source-drain region of LDD structure and a salicide structure. SOLUTION: The MIS type semiconductor...

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Bibliographische Detailangaben

1. Verfasser:	SATOU TOSHIHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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