SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
PROBLEM TO BE SOLVED: To provide a semiconductor device superior in reliability for high-speed operation, and to provide a method of manufacturing the semiconductor device of small mobility, while increasing hysteresis is suppressed, using a High-k film. SOLUTION: The semiconductor device comprises...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | TORII KAZUNARI MIHASHI RIICHIRO |
| description | PROBLEM TO BE SOLVED: To provide a semiconductor device superior in reliability for high-speed operation, and to provide a method of manufacturing the semiconductor device of small mobility, while increasing hysteresis is suppressed, using a High-k film. SOLUTION: The semiconductor device comprises a silicon oxynitride film formed on a silicon substrate, and a high dielectric insulating film formed on the silicon oxynitride film. The concentration of nitrogen in the silicon oxynitride film has a distribution in the film thickness direction, and the concentration is low near the interface with the silicon substrate while high near the interface with the high dielectric insulating film, relative to the average value of the concentration of the nitrogen in the silicon oxynitride film. Thus, the semiconductor device is provided, in which the increase in the hysteresis and drop in the mobility due to thermal process are small. COPYRIGHT: (C)2006,JPO&NCIPI |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2006066503A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2006066503A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2006066503A3</originalsourceid><addsrcrecordid>eNrjZDANdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HX0C3VzdA4JDfL0c1fwdQ3x8HdRCPFwDXL1d-NhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBmYGZmamBsaOxkQpAgBJ6igs</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF</title><source>esp@cenet</source><creator>TORII KAZUNARI ; MIHASHI RIICHIRO</creator><creatorcontrib>TORII KAZUNARI ; MIHASHI RIICHIRO</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a semiconductor device superior in reliability for high-speed operation, and to provide a method of manufacturing the semiconductor device of small mobility, while increasing hysteresis is suppressed, using a High-k film. SOLUTION: The semiconductor device comprises a silicon oxynitride film formed on a silicon substrate, and a high dielectric insulating film formed on the silicon oxynitride film. The concentration of nitrogen in the silicon oxynitride film has a distribution in the film thickness direction, and the concentration is low near the interface with the silicon substrate while high near the interface with the high dielectric insulating film, relative to the average value of the concentration of the nitrogen in the silicon oxynitride film. Thus, the semiconductor device is provided, in which the increase in the hysteresis and drop in the mobility due to thermal process are small. COPYRIGHT: (C)2006,JPO&NCIPI</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060309&DB=EPODOC&CC=JP&NR=2006066503A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060309&DB=EPODOC&CC=JP&NR=2006066503A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TORII KAZUNARI</creatorcontrib><creatorcontrib>MIHASHI RIICHIRO</creatorcontrib><title>SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF</title><description>PROBLEM TO BE SOLVED: To provide a semiconductor device superior in reliability for high-speed operation, and to provide a method of manufacturing the semiconductor device of small mobility, while increasing hysteresis is suppressed, using a High-k film. SOLUTION: The semiconductor device comprises a silicon oxynitride film formed on a silicon substrate, and a high dielectric insulating film formed on the silicon oxynitride film. The concentration of nitrogen in the silicon oxynitride film has a distribution in the film thickness direction, and the concentration is low near the interface with the silicon substrate while high near the interface with the high dielectric insulating film, relative to the average value of the concentration of the nitrogen in the silicon oxynitride film. Thus, the semiconductor device is provided, in which the increase in the hysteresis and drop in the mobility due to thermal process are small. COPYRIGHT: (C)2006,JPO&NCIPI</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDANdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HX0C3VzdA4JDfL0c1fwdQ3x8HdRCPFwDXL1d-NhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGBmYGZmamBsaOxkQpAgBJ6igs</recordid><startdate>20060309</startdate><enddate>20060309</enddate><creator>TORII KAZUNARI</creator><creator>MIHASHI RIICHIRO</creator><scope>EVB</scope></search><sort><creationdate>20060309</creationdate><title>SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF</title><author>TORII KAZUNARI ; MIHASHI RIICHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2006066503A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2006</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TORII KAZUNARI</creatorcontrib><creatorcontrib>MIHASHI RIICHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TORII KAZUNARI</au><au>MIHASHI RIICHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF</title><date>2006-03-09</date><risdate>2006</risdate><abstract>PROBLEM TO BE SOLVED: To provide a semiconductor device superior in reliability for high-speed operation, and to provide a method of manufacturing the semiconductor device of small mobility, while increasing hysteresis is suppressed, using a High-k film. SOLUTION: The semiconductor device comprises a silicon oxynitride film formed on a silicon substrate, and a high dielectric insulating film formed on the silicon oxynitride film. The concentration of nitrogen in the silicon oxynitride film has a distribution in the film thickness direction, and the concentration is low near the interface with the silicon substrate while high near the interface with the high dielectric insulating film, relative to the average value of the concentration of the nitrogen in the silicon oxynitride film. Thus, the semiconductor device is provided, in which the increase in the hysteresis and drop in the mobility due to thermal process are small. COPYRIGHT: (C)2006,JPO&NCIPI</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JP2006066503A |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T19%3A23%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TORII%20KAZUNARI&rft.date=2006-03-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2006066503A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |