FOCUS MONITORING METHOD OF EXPOSURE DEVICE AND EXPOSURE METHOD USING THE SAME
PROBLEM TO BE SOLVED: To monitor a focus value of an exposure device during production in photolithography. SOLUTION: CD focus curves 2a and 4a of two patterns different in a best focus and a CD focus curve 12a of one pattern deciding a reference of a size are formed. Exposure of an exposure device...
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| creator | ASAHI KENICHI NISHINO KATSUHIRO |
| description | PROBLEM TO BE SOLVED: To monitor a focus value of an exposure device during production in photolithography. SOLUTION: CD focus curves 2a and 4a of two patterns different in a best focus and a CD focus curve 12a of one pattern deciding a reference of a size are formed. Exposure of an exposure device is set so that an average value of a minimum value 14a and a maximum value 16a of a focus value decided from a common focus depth 7 of the CD focus curves 2a and 4a becomes equal to the best focus 10a which is set in production and a size 12b of the CD focus curve 12a becomes a size requested in production. When sizes 2b and 4b of the CD focus curves 2a and 4a in the respective focus values are measured while the focus value is changed, a calibration curve is obtained from a corresponding relation between a differences 13 of the sizes and the focus value 15a. The focus value 15a of the exposure device can be monitored from the difference 13 of the sizes on a wafer in production. COPYRIGHT: (C)2006,JPO&NCIPI |
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SOLUTION: CD focus curves 2a and 4a of two patterns different in a best focus and a CD focus curve 12a of one pattern deciding a reference of a size are formed. Exposure of an exposure device is set so that an average value of a minimum value 14a and a maximum value 16a of a focus value decided from a common focus depth 7 of the CD focus curves 2a and 4a becomes equal to the best focus 10a which is set in production and a size 12b of the CD focus curve 12a becomes a size requested in production. When sizes 2b and 4b of the CD focus curves 2a and 4a in the respective focus values are measured while the focus value is changed, a calibration curve is obtained from a corresponding relation between a differences 13 of the sizes and the focus value 15a. The focus value 15a of the exposure device can be monitored from the difference 13 of the sizes on a wafer in production. 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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | FOCUS MONITORING METHOD OF EXPOSURE DEVICE AND EXPOSURE METHOD USING THE SAME |
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