CVD RAW MATERIAL FOR THIN FILM, AND THIN FILM OBTAINED BY USING THE SAME
PROBLEM TO BE SOLVED: To provide a CVD raw material which shows excellent vaporization characteristics even when being used in a continuous operation for a long period of time and can manufacture a uniform composition with a high reproducibility. SOLUTION: The CVD raw material for thin film is obtai...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | TAZAKI YUZO YOSHIZAWA HIDEJI |
| description | PROBLEM TO BE SOLVED: To provide a CVD raw material which shows excellent vaporization characteristics even when being used in a continuous operation for a long period of time and can manufacture a uniform composition with a high reproducibility. SOLUTION: The CVD raw material for thin film is obtained by dissolving organo-metallic compound in a solvent containing 1,2-epoxy cyclohexane. Preferably, the organic metal compound is at least one kind of dipivaloylmethanato, pentafluoro propanoyl pivaloylmethanato, diisobutylylmethanato, isobutyryl pivaloylmethanato, acetyl acetonato, hexafluoro acetylacetonate, 2,2,6,6-tetramethyl -3,5-octane dionate, diolato, dialkyl amide complexex, alkoxide, or cyclopentadienyl of a metal, or derivative thereof, the metal is at least one kind selected from a group of Bi, Sr, Ba, Ti, La, Nb, Pb, Ni, Ta, Nd and Zr. The thin film is deposited by the solution CVD method by using the raw material. COPYRIGHT: (C)2006,JPO&NCIPI |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2006037123A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2006037123A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2006037123A3</originalsourceid><addsrcrecordid>eNrjZPBwDnNRCHIMV_B1DHEN8nT0UXDzD1II8fD0U3Dz9PHVUXD0c0FwFfydQhw9_VxdFJwiFUKDPf3cgXKuCsGOvq48DKxpiTnFqbxQmptByc01xNlDN7UgPz61uCAxOTUvtSTeK8DIwMDMwNjc0MjY0ZgoRQDrVCxT</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CVD RAW MATERIAL FOR THIN FILM, AND THIN FILM OBTAINED BY USING THE SAME</title><source>esp@cenet</source><creator>TAZAKI YUZO ; YOSHIZAWA HIDEJI</creator><creatorcontrib>TAZAKI YUZO ; YOSHIZAWA HIDEJI</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a CVD raw material which shows excellent vaporization characteristics even when being used in a continuous operation for a long period of time and can manufacture a uniform composition with a high reproducibility. SOLUTION: The CVD raw material for thin film is obtained by dissolving organo-metallic compound in a solvent containing 1,2-epoxy cyclohexane. Preferably, the organic metal compound is at least one kind of dipivaloylmethanato, pentafluoro propanoyl pivaloylmethanato, diisobutylylmethanato, isobutyryl pivaloylmethanato, acetyl acetonato, hexafluoro acetylacetonate, 2,2,6,6-tetramethyl -3,5-octane dionate, diolato, dialkyl amide complexex, alkoxide, or cyclopentadienyl of a metal, or derivative thereof, the metal is at least one kind selected from a group of Bi, Sr, Ba, Ti, La, Nb, Pb, Ni, Ta, Nd and Zr. The thin film is deposited by the solution CVD method by using the raw material. COPYRIGHT: (C)2006,JPO&NCIPI</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060209&DB=EPODOC&CC=JP&NR=2006037123A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060209&DB=EPODOC&CC=JP&NR=2006037123A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAZAKI YUZO</creatorcontrib><creatorcontrib>YOSHIZAWA HIDEJI</creatorcontrib><title>CVD RAW MATERIAL FOR THIN FILM, AND THIN FILM OBTAINED BY USING THE SAME</title><description>PROBLEM TO BE SOLVED: To provide a CVD raw material which shows excellent vaporization characteristics even when being used in a continuous operation for a long period of time and can manufacture a uniform composition with a high reproducibility. SOLUTION: The CVD raw material for thin film is obtained by dissolving organo-metallic compound in a solvent containing 1,2-epoxy cyclohexane. Preferably, the organic metal compound is at least one kind of dipivaloylmethanato, pentafluoro propanoyl pivaloylmethanato, diisobutylylmethanato, isobutyryl pivaloylmethanato, acetyl acetonato, hexafluoro acetylacetonate, 2,2,6,6-tetramethyl -3,5-octane dionate, diolato, dialkyl amide complexex, alkoxide, or cyclopentadienyl of a metal, or derivative thereof, the metal is at least one kind selected from a group of Bi, Sr, Ba, Ti, La, Nb, Pb, Ni, Ta, Nd and Zr. The thin film is deposited by the solution CVD method by using the raw material. COPYRIGHT: (C)2006,JPO&NCIPI</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPBwDnNRCHIMV_B1DHEN8nT0UXDzD1II8fD0U3Dz9PHVUXD0c0FwFfydQhw9_VxdFJwiFUKDPf3cgXKuCsGOvq48DKxpiTnFqbxQmptByc01xNlDN7UgPz61uCAxOTUvtSTeK8DIwMDMwNjc0MjY0ZgoRQDrVCxT</recordid><startdate>20060209</startdate><enddate>20060209</enddate><creator>TAZAKI YUZO</creator><creator>YOSHIZAWA HIDEJI</creator><scope>EVB</scope></search><sort><creationdate>20060209</creationdate><title>CVD RAW MATERIAL FOR THIN FILM, AND THIN FILM OBTAINED BY USING THE SAME</title><author>TAZAKI YUZO ; YOSHIZAWA HIDEJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2006037123A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2006</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>TAZAKI YUZO</creatorcontrib><creatorcontrib>YOSHIZAWA HIDEJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAZAKI YUZO</au><au>YOSHIZAWA HIDEJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CVD RAW MATERIAL FOR THIN FILM, AND THIN FILM OBTAINED BY USING THE SAME</title><date>2006-02-09</date><risdate>2006</risdate><abstract>PROBLEM TO BE SOLVED: To provide a CVD raw material which shows excellent vaporization characteristics even when being used in a continuous operation for a long period of time and can manufacture a uniform composition with a high reproducibility. SOLUTION: The CVD raw material for thin film is obtained by dissolving organo-metallic compound in a solvent containing 1,2-epoxy cyclohexane. Preferably, the organic metal compound is at least one kind of dipivaloylmethanato, pentafluoro propanoyl pivaloylmethanato, diisobutylylmethanato, isobutyryl pivaloylmethanato, acetyl acetonato, hexafluoro acetylacetonate, 2,2,6,6-tetramethyl -3,5-octane dionate, diolato, dialkyl amide complexex, alkoxide, or cyclopentadienyl of a metal, or derivative thereof, the metal is at least one kind selected from a group of Bi, Sr, Ba, Ti, La, Nb, Pb, Ni, Ta, Nd and Zr. The thin film is deposited by the solution CVD method by using the raw material. COPYRIGHT: (C)2006,JPO&NCIPI</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JP2006037123A |
| source | esp@cenet |
| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | CVD RAW MATERIAL FOR THIN FILM, AND THIN FILM OBTAINED BY USING THE SAME |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T09%3A34%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TAZAKI%20YUZO&rft.date=2006-02-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2006037123A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |