INTERNAL WIRING OF SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a high-purity single crystal copper which, when formed into a film and applied as a wiring onto an Si substrate, can give a semiconductor device having fine wirings highly resistant to corrosion in virtue of the merits, i.e., EM resistance and SM resistance, of coppe...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | FUJIWARA SATOSHI NISHINO ISAMU NAGATA CHOJU |
| description | PROBLEM TO BE SOLVED: To provide a high-purity single crystal copper which, when formed into a film and applied as a wiring onto an Si substrate, can give a semiconductor device having fine wirings highly resistant to corrosion in virtue of the merits, i.e., EM resistance and SM resistance, of copper, to provide a sputtering target made from the obtained single crystal copper, and to provide a semiconductor element having a wiring made from a film of the target. SOLUTION: High-purity copper having a purity of at lowest 99.9999 wt% and having a total content of silver and sulfur of at highest 0.1 ppm is used as a starting material. This is placed in a raw material crucible 5 set in an electric furnace 1 and is melted. The molten copper is dropped into a lower single crystal mold 6 through a molten copper drop port 4 on the bottom of the crucible 5. In the meantime, the temperature is controlled by means of middle and lower heaters 10, 11 and 12, and the quartz cylinder 3 is evacuated by means of a vacuum system 2. The furnace 1 has on its bottom a heat-insulating trap 8 surrounded with a water-cooling flange 7 through which cooling water 9 passes. The high-purity single crystal copper desirable as a target material for forming a wiring in a semiconductor element accumulates in the single crystal mold 6 of this apparatus. COPYRIGHT: (C)2006,JPO&NCIPI |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2006028642A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2006028642A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2006028642A3</originalsourceid><addsrcrecordid>eNrjZFD39AtxDfJz9FEI9wzy9HNX8HdTCHb19XT293MJdQ7xD1JwcQ3zdHblYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBgZmBkYWZiZGjsZEKQIAM60kTw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>INTERNAL WIRING OF SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>FUJIWARA SATOSHI ; NISHINO ISAMU ; NAGATA CHOJU</creator><creatorcontrib>FUJIWARA SATOSHI ; NISHINO ISAMU ; NAGATA CHOJU</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide a high-purity single crystal copper which, when formed into a film and applied as a wiring onto an Si substrate, can give a semiconductor device having fine wirings highly resistant to corrosion in virtue of the merits, i.e., EM resistance and SM resistance, of copper, to provide a sputtering target made from the obtained single crystal copper, and to provide a semiconductor element having a wiring made from a film of the target. SOLUTION: High-purity copper having a purity of at lowest 99.9999 wt% and having a total content of silver and sulfur of at highest 0.1 ppm is used as a starting material. This is placed in a raw material crucible 5 set in an electric furnace 1 and is melted. The molten copper is dropped into a lower single crystal mold 6 through a molten copper drop port 4 on the bottom of the crucible 5. In the meantime, the temperature is controlled by means of middle and lower heaters 10, 11 and 12, and the quartz cylinder 3 is evacuated by means of a vacuum system 2. The furnace 1 has on its bottom a heat-insulating trap 8 surrounded with a water-cooling flange 7 through which cooling water 9 passes. The high-purity single crystal copper desirable as a target material for forming a wiring in a semiconductor element accumulates in the single crystal mold 6 of this apparatus. COPYRIGHT: (C)2006,JPO&NCIPI</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; ALLOYS ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FERROUS OR NON-FERROUS ALLOYS ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TREATMENT OF ALLOYS OR NON-FERROUS METALS ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2006</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060202&DB=EPODOC&CC=JP&NR=2006028642A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20060202&DB=EPODOC&CC=JP&NR=2006028642A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FUJIWARA SATOSHI</creatorcontrib><creatorcontrib>NISHINO ISAMU</creatorcontrib><creatorcontrib>NAGATA CHOJU</creatorcontrib><title>INTERNAL WIRING OF SEMICONDUCTOR DEVICE</title><description>PROBLEM TO BE SOLVED: To provide a high-purity single crystal copper which, when formed into a film and applied as a wiring onto an Si substrate, can give a semiconductor device having fine wirings highly resistant to corrosion in virtue of the merits, i.e., EM resistance and SM resistance, of copper, to provide a sputtering target made from the obtained single crystal copper, and to provide a semiconductor element having a wiring made from a film of the target. SOLUTION: High-purity copper having a purity of at lowest 99.9999 wt% and having a total content of silver and sulfur of at highest 0.1 ppm is used as a starting material. This is placed in a raw material crucible 5 set in an electric furnace 1 and is melted. The molten copper is dropped into a lower single crystal mold 6 through a molten copper drop port 4 on the bottom of the crucible 5. In the meantime, the temperature is controlled by means of middle and lower heaters 10, 11 and 12, and the quartz cylinder 3 is evacuated by means of a vacuum system 2. The furnace 1 has on its bottom a heat-insulating trap 8 surrounded with a water-cooling flange 7 through which cooling water 9 passes. The high-purity single crystal copper desirable as a target material for forming a wiring in a semiconductor element accumulates in the single crystal mold 6 of this apparatus. COPYRIGHT: (C)2006,JPO&NCIPI</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>ALLOYS</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FERROUS OR NON-FERROUS ALLOYS</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2006</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD39AtxDfJz9FEI9wzy9HNX8HdTCHb19XT293MJdQ7xD1JwcQ3zdHblYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBgZmBkYWZiZGjsZEKQIAM60kTw</recordid><startdate>20060202</startdate><enddate>20060202</enddate><creator>FUJIWARA SATOSHI</creator><creator>NISHINO ISAMU</creator><creator>NAGATA CHOJU</creator><scope>EVB</scope></search><sort><creationdate>20060202</creationdate><title>INTERNAL WIRING OF SEMICONDUCTOR DEVICE</title><author>FUJIWARA SATOSHI ; NISHINO ISAMU ; NAGATA CHOJU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2006028642A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2006</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>ALLOYS</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FERROUS OR NON-FERROUS ALLOYS</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TREATMENT OF ALLOYS OR NON-FERROUS METALS</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>FUJIWARA SATOSHI</creatorcontrib><creatorcontrib>NISHINO ISAMU</creatorcontrib><creatorcontrib>NAGATA CHOJU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FUJIWARA SATOSHI</au><au>NISHINO ISAMU</au><au>NAGATA CHOJU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>INTERNAL WIRING OF SEMICONDUCTOR DEVICE</title><date>2006-02-02</date><risdate>2006</risdate><abstract>PROBLEM TO BE SOLVED: To provide a high-purity single crystal copper which, when formed into a film and applied as a wiring onto an Si substrate, can give a semiconductor device having fine wirings highly resistant to corrosion in virtue of the merits, i.e., EM resistance and SM resistance, of copper, to provide a sputtering target made from the obtained single crystal copper, and to provide a semiconductor element having a wiring made from a film of the target. SOLUTION: High-purity copper having a purity of at lowest 99.9999 wt% and having a total content of silver and sulfur of at highest 0.1 ppm is used as a starting material. This is placed in a raw material crucible 5 set in an electric furnace 1 and is melted. The molten copper is dropped into a lower single crystal mold 6 through a molten copper drop port 4 on the bottom of the crucible 5. In the meantime, the temperature is controlled by means of middle and lower heaters 10, 11 and 12, and the quartz cylinder 3 is evacuated by means of a vacuum system 2. The furnace 1 has on its bottom a heat-insulating trap 8 surrounded with a water-cooling flange 7 through which cooling water 9 passes. The high-purity single crystal copper desirable as a target material for forming a wiring in a semiconductor element accumulates in the single crystal mold 6 of this apparatus. COPYRIGHT: (C)2006,JPO&NCIPI</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JP2006028642A |
| source | esp@cenet |
| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ALLOYS APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | INTERNAL WIRING OF SEMICONDUCTOR DEVICE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-14T21%3A55%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=FUJIWARA%20SATOSHI&rft.date=2006-02-02&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2006028642A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |