SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a void formed within an interlayer insulated film can be thoroughly removed by forming a contact hole, and to provide a method for manufacturing the same. SOLUTION: A trench 3 is comprised of a wide trench 3a and a narrow trench 3b. A p...

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Bibliographische Detailangaben
1. Verfasser: IWATANI MASANOBU
Format: Patent
Sprache:eng
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