SOI WAFER AND METHOD FOR PRODUCING IT

PROBLEM TO BE SOLVED: To provide a suitable donor substrate which is manufactured with a high yield, and in which only a slight error-occurrence frequency is guaranteed, when manufacturing a device on an SOI wafer obtained. SOLUTION: The SOI wafer is composed of a carrier wafer and a monocrystalline...

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Bibliographische Detailangaben
Hauptverfasser:	ZEMKE DIRK, BLIETZ MARKUS, MILLER ALFRED, WAHLICH REINHOLD, GRAEF DIETER
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a suitable donor substrate which is manufactured with a high yield, and in which only a slight error-occurrence frequency is guaranteed, when manufacturing a device on an SOI wafer obtained. SOLUTION: The SOI wafer is composed of a carrier wafer and a monocrystalline silicon layer having a thickness of less than 500 nm, excess of interstitial silicon atoms prevailing in the entire volume of the silicon layer. COPYRIGHT: (C)2006,JPO&NCIPI