METHOD FOR WORKING METALLIC MAGNETIC MATERIAL FILM
PROBLEM TO BE SOLVED: To provide a method, by which an etching-work for metallic magnetic material film can be performed in a high selectablity to a mask without using gas having high toxicity. SOLUTION: Plasma is generated from reaction gas containing hydrocarbon compound gas, gas of compound havin...
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| creator | MOTOYAMA SHINICHI KURATOMI NAOYUKI |
| description | PROBLEM TO BE SOLVED: To provide a method, by which an etching-work for metallic magnetic material film can be performed in a high selectablity to a mask without using gas having high toxicity. SOLUTION: Plasma is generated from reaction gas containing hydrocarbon compound gas, gas of compound having oxygen atom and gas of compound having nitrogen atom by using high frequency, and the etching of the metallic magnetic material film is performed with this plasma. In this reaction, a little amount of argon gas can be added, and in this way, the etching speed can be improved, and for further improving the etching speed, hydrogen fluoride carbide can be used. COPYRIGHT: (C)2006,JPO&NCIPI |
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SOLUTION: Plasma is generated from reaction gas containing hydrocarbon compound gas, gas of compound having oxygen atom and gas of compound having nitrogen atom by using high frequency, and the etching of the metallic magnetic material film is performed with this plasma. In this reaction, a little amount of argon gas can be added, and in this way, the etching speed can be improved, and for further improving the etching speed, hydrogen fluoride carbide can be used. 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SOLUTION: Plasma is generated from reaction gas containing hydrocarbon compound gas, gas of compound having oxygen atom and gas of compound having nitrogen atom by using high frequency, and the etching of the metallic magnetic material film is performed with this plasma. In this reaction, a little amount of argon gas can be added, and in this way, the etching speed can be improved, and for further improving the etching speed, hydrogen fluoride carbide can be used. COPYRIGHT: (C)2006,JPO&NCIPI</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INDUCTANCES</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MAGNETS</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSFORMERS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2005</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDydQ3x8HdRcPMPUgj3D_L29HNXAAo5-vh4Oiv4Orr7uYaAGSGuQZ6OPgpunj6-PAysaYk5xam8UJqbQcnNNcTZQze1ID8-tbggMTk1L7Uk3ivAyMDA1NjQxNzS0NGYKEUAtzInIA</recordid><startdate>20051110</startdate><enddate>20051110</enddate><creator>MOTOYAMA SHINICHI</creator><creator>KURATOMI NAOYUKI</creator><scope>EVB</scope></search><sort><creationdate>20051110</creationdate><title>METHOD FOR WORKING METALLIC MAGNETIC MATERIAL FILM</title><author>MOTOYAMA SHINICHI ; KURATOMI NAOYUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2005314791A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2005</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INDUCTANCES</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MAGNETS</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSFORMERS</topic><toplevel>online_resources</toplevel><creatorcontrib>MOTOYAMA SHINICHI</creatorcontrib><creatorcontrib>KURATOMI NAOYUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MOTOYAMA SHINICHI</au><au>KURATOMI NAOYUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR WORKING METALLIC MAGNETIC MATERIAL FILM</title><date>2005-11-10</date><risdate>2005</risdate><abstract>PROBLEM TO BE SOLVED: To provide a method, by which an etching-work for metallic magnetic material film can be performed in a high selectablity to a mask without using gas having high toxicity. SOLUTION: Plasma is generated from reaction gas containing hydrocarbon compound gas, gas of compound having oxygen atom and gas of compound having nitrogen atom by using high frequency, and the etching of the metallic magnetic material film is performed with this plasma. In this reaction, a little amount of argon gas can be added, and in this way, the etching speed can be improved, and for further improving the etching speed, hydrogen fluoride carbide can be used. COPYRIGHT: (C)2006,JPO&NCIPI</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDUCTANCES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MAGNETS METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SEMICONDUCTOR DEVICES TRANSFORMERS |
| title | METHOD FOR WORKING METALLIC MAGNETIC MATERIAL FILM |
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