SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF ELECTROOPTICAL DEVICE, BOARD THEREFOR AND ELECTRONIC APPARATUS
PROBLEM TO BE SOLVED: To provide a manufacturing method capable of forming an LDD structure in a self-alignment way, controlling the length of a doping region, and suppressing the instability of a characteristic attended with the implantation of supersaturated hydrogen atoms, and to provide a semico...
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| creator | ISHIDA YUKIMASA NOZAWA RYOICHI |
| description | PROBLEM TO BE SOLVED: To provide a manufacturing method capable of forming an LDD structure in a self-alignment way, controlling the length of a doping region, and suppressing the instability of a characteristic attended with the implantation of supersaturated hydrogen atoms, and to provide a semiconductor device, a board for an electrooptical device, the electrooptical device, and an electronic apparatus. SOLUTION: The manufacturing method includes an electrode forming step for forming an electrode 13 on the surface of a semiconductor layer 11; an insulation film forming step of forming insulation films 12, 14 containing nitrogen on the electrode 13; and a heat treatment step of carrying out heat treatment in an atmosphere including water vapor, oxygen, or hydrogen to form nitrogen concentration distributions in the insulation films 12, 14. COPYRIGHT: (C)2006,JPO&NCIPI |
| format | Patent |
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SOLUTION: The manufacturing method includes an electrode forming step for forming an electrode 13 on the surface of a semiconductor layer 11; an insulation film forming step of forming insulation films 12, 14 containing nitrogen on the electrode 13; and a heat treatment step of carrying out heat treatment in an atmosphere including water vapor, oxygen, or hydrogen to form nitrogen concentration distributions in the insulation films 12, 14. 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SOLUTION: The manufacturing method includes an electrode forming step for forming an electrode 13 on the surface of a semiconductor layer 11; an insulation film forming step of forming insulation films 12, 14 containing nitrogen on the electrode 13; and a heat treatment step of carrying out heat treatment in an atmosphere including water vapor, oxygen, or hydrogen to form nitrogen concentration distributions in the insulation films 12, 14. 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SOLUTION: The manufacturing method includes an electrode forming step for forming an electrode 13 on the surface of a semiconductor layer 11; an insulation film forming step of forming insulation films 12, 14 containing nitrogen on the electrode 13; and a heat treatment step of carrying out heat treatment in an atmosphere including water vapor, oxygen, or hydrogen to form nitrogen concentration distributions in the insulation films 12, 14. COPYRIGHT: (C)2006,JPO&NCIPI</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
| title | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF ELECTROOPTICAL DEVICE, BOARD THEREFOR AND ELECTRONIC APPARATUS |
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