METHOD OF ACQUIRING DATA ON LIFE OF BASE INSULATION FILM

PROBLEM TO BE SOLVED: To provide a method of acquiring data on the life of a base film which will become a base layer of a high-k material insulation film, and eventually to provide a method of testing the life of a field effect transistor which uses the high-k material for a gate insulation film. S...

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1. Verfasser: TORII KAZUNARI
Format: Patent
Sprache:eng
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