METHOD OF ACQUIRING DATA ON LIFE OF BASE INSULATION FILM

METHOD OF ACQUIRING DATA ON LIFE OF BASE INSULATION FILM

PROBLEM TO BE SOLVED: To provide a method of acquiring data on the life of a base film which will become a base layer of a high-k material insulation film, and eventually to provide a method of testing the life of a field effect transistor which uses the high-k material for a gate insulation film. S...

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1. Verfasser: TORII KAZUNARI
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator TORII KAZUNARI
description PROBLEM TO BE SOLVED: To provide a method of acquiring data on the life of a base film which will become a base layer of a high-k material insulation film, and eventually to provide a method of testing the life of a field effect transistor which uses the high-k material for a gate insulation film. SOLUTION: The method of acquiring data is provided on the life of an insulation film which indicates the life of the insulation film in the base film 103 by using a semiconductor apparatus comprising a p-type substrate 102, the base film 103, a high-k film 104, and a gate electrode 105. The method comprises a negative bias application process of applying a negative bias to the gate electrode 105; and a data acquisition process wherein a change over time in leakage current flowing to the gate electrode 105 from the p-type substrate 102 via the base film 103 and the high-k film 104 is measured, and thereafter, the negative bias application time until an inflection point appears in the change in the leakage current over time is acquired as the data on the life of the insulation film of the base film 103. COPYRIGHT: (C)2006,JPO&NCIPI
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SOLUTION: The method of acquiring data is provided on the life of an insulation film which indicates the life of the insulation film in the base film 103 by using a semiconductor apparatus comprising a p-type substrate 102, the base film 103, a high-k film 104, and a gate electrode 105. The method comprises a negative bias application process of applying a negative bias to the gate electrode 105; and a data acquisition process wherein a change over time in leakage current flowing to the gate electrode 105 from the p-type substrate 102 via the base film 103 and the high-k film 104 is measured, and thereafter, the negative bias application time until an inflection point appears in the change in the leakage current over time is acquired as the data on the life of the insulation film of the base film 103. 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SOLUTION: The method of acquiring data is provided on the life of an insulation film which indicates the life of the insulation film in the base film 103 by using a semiconductor apparatus comprising a p-type substrate 102, the base film 103, a high-k film 104, and a gate electrode 105. The method comprises a negative bias application process of applying a negative bias to the gate electrode 105; and a data acquisition process wherein a change over time in leakage current flowing to the gate electrode 105 from the p-type substrate 102 via the base film 103 and the high-k film 104 is measured, and thereafter, the negative bias application time until an inflection point appears in the change in the leakage current over time is acquired as the data on the life of the insulation film of the base film 103. 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SOLUTION: The method of acquiring data is provided on the life of an insulation film which indicates the life of the insulation film in the base film 103 by using a semiconductor apparatus comprising a p-type substrate 102, the base film 103, a high-k film 104, and a gate electrode 105. The method comprises a negative bias application process of applying a negative bias to the gate electrode 105; and a data acquisition process wherein a change over time in leakage current flowing to the gate electrode 105 from the p-type substrate 102 via the base film 103 and the high-k film 104 is measured, and thereafter, the negative bias application time until an inflection point appears in the change in the leakage current over time is acquired as the data on the life of the insulation film of the base film 103. COPYRIGHT: (C)2006,JPO&amp;NCIPI</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD OF ACQUIRING DATA ON LIFE OF BASE INSULATION FILM
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