MULTIPLE EXPOSURE METHOD, MICROLITHOGRAPHIC PROJECTION ALIGNER, AND PROJECTION SYSTEM
PROBLEM TO BE SOLVED: To provide a multiple exposure method achieving a large throughput of wafer processing, and a microlithographic projection aligner which improves the productivity, at least with unchanging quality and low cost. SOLUTION: In the multiple exposure method for at least one substrat...
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Zusammenfassung: | PROBLEM TO BE SOLVED: To provide a multiple exposure method achieving a large throughput of wafer processing, and a microlithographic projection aligner which improves the productivity, at least with unchanging quality and low cost. SOLUTION: In the multiple exposure method for at least one substrate covered with a photosensitive layer, first exposure is performed in a first projection system (17) according to an exposure parameter of a first group, and second exposure is performed in a second projection system (18) spatially separated from the first projection system (17). These projection systems are integrated with a common projection aligner (1). For example, the first exposure is performed using an amplitude mask (6), and the second exposure is performed using a phase mask (9). The first exposure and the second exposure are performed in parallel, by using a number of projection systems, thereby achieving multiple exposures which save time. COPYRIGHT: (C)2005,JPO&NCIPI |
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