METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To provide a compound semiconductor which has a base plate and a compound semiconductor layer formed on the base plate and has a lattice mismatch of 2% or higher between the base plate and the compound semiconductor layer, and which can reduce generation of crystalline defect o...
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| creator | SATO YASUO NARUI HIRONOBU HINO TOMOKIMI |
| description | PROBLEM TO BE SOLVED: To provide a compound semiconductor which has a base plate and a compound semiconductor layer formed on the base plate and has a lattice mismatch of 2% or higher between the base plate and the compound semiconductor layer, and which can reduce generation of crystalline defect or dislocation. SOLUTION: A first epitaxial growth step of forming a buffer layer 3 on a base plate and a second epitaxial growth step of forming a compound semiconductor layer 4 on the buffer layer 3 are carried out at a growth temperature of ≤600°C by an MOCVD (metal organic chemical vapor deposition) method. When the growth temperature is selected, compatibility among the reduction of crystalline defect in the compound semiconductor layer 4, the maintenance or improvement of a dissociation efficiency of a source material such as group V and III elements, and the prevention of reduction of a growth rate can be attained. COPYRIGHT: (C)2005,JPO&NCIPI |
| format | Patent |
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SOLUTION: A first epitaxial growth step of forming a buffer layer 3 on a base plate and a second epitaxial growth step of forming a compound semiconductor layer 4 on the buffer layer 3 are carried out at a growth temperature of ≤600°C by an MOCVD (metal organic chemical vapor deposition) method. When the growth temperature is selected, compatibility among the reduction of crystalline defect in the compound semiconductor layer 4, the maintenance or improvement of a dissociation efficiency of a source material such as group V and III elements, and the prevention of reduction of a growth rate can be attained. 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SOLUTION: A first epitaxial growth step of forming a buffer layer 3 on a base plate and a second epitaxial growth step of forming a compound semiconductor layer 4 on the buffer layer 3 are carried out at a growth temperature of ≤600°C by an MOCVD (metal organic chemical vapor deposition) method. When the growth temperature is selected, compatibility among the reduction of crystalline defect in the compound semiconductor layer 4, the maintenance or improvement of a dissociation efficiency of a source material such as group V and III elements, and the prevention of reduction of a growth rate can be attained. 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SOLUTION: A first epitaxial growth step of forming a buffer layer 3 on a base plate and a second epitaxial growth step of forming a compound semiconductor layer 4 on the buffer layer 3 are carried out at a growth temperature of ≤600°C by an MOCVD (metal organic chemical vapor deposition) method. When the growth temperature is selected, compatibility among the reduction of crystalline defect in the compound semiconductor layer 4, the maintenance or improvement of a dissociation efficiency of a source material such as group V and III elements, and the prevention of reduction of a growth rate can be attained. COPYRIGHT: (C)2005,JPO&NCIPI</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
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