METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To make a mask thin, when a conductive film made of tungsten is etched. SOLUTION: The manufacturing method includes a W film forming step (S108) to form the W film formed of a conductive member containing tungsten (W) on a substrate, a Zr film forming step (S110) for forming a...
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| Zusammenfassung: | PROBLEM TO BE SOLVED: To make a mask thin, when a conductive film made of tungsten is etched. SOLUTION: The manufacturing method includes a W film forming step (S108) to form the W film formed of a conductive member containing tungsten (W) on a substrate, a Zr film forming step (S110) for forming a Zr film made of zirconium (Zr) on the W film that is formed in the W film formation step (S108), and a W film etching step (S128) for etching the W film, while using the Zr film as a mask that is formed in the Zr film forming step (S110). COPYRIGHT: (C)2005,JPO&NCIPI |
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