VACUUM EVAPORATION DEVICE AND METHOD
PROBLEM TO BE SOLVED: To provide a vacuum evaporation device which can increase productivity and product yield. SOLUTION: A chamber 14 is formed with a bottom wall 1402, a side wall 1404 and an upper wall 1406 and has an anti-deposition plate 16 for the bottom wall, an anti-deposition plate 18 for t...
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| creator | YAGI KAZUMASA KIKUCHI MADOKA |
| description | PROBLEM TO BE SOLVED: To provide a vacuum evaporation device which can increase productivity and product yield. SOLUTION: A chamber 14 is formed with a bottom wall 1402, a side wall 1404 and an upper wall 1406 and has an anti-deposition plate 16 for the bottom wall, an anti-deposition plate 18 for the side wall and the anti-deposition plate 20 for the upper wall. The anti-deposition plate 16 for the bottom wall partitions the chamber 14 into an upper space 14A and a lower space 14B. Between the circumference of the anti-deposition plate 16 for the bottom wall and the side wall 1404, there is a gap S through which air can pass. A crucible 24 storing an evaporation material 22 is supported at the center of the upper surface of the anti-deposition plate 16 for the bottom wall. A holding means 26 for holding a deposition target is positioned at the center of the lower surface of the anti-deposition plate 20 for the upper wall. An electron beam irradiation means 28 for heating, melting and evaporating the evaporation material 22 is placed in the upper part of the chamber 14. A vent 30 for taking in air is formed on the side wall 1404 at a point facing the lower space 14B. COPYRIGHT: (C)2005,JPO&NCIPI |
| format | Patent |
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SOLUTION: A chamber 14 is formed with a bottom wall 1402, a side wall 1404 and an upper wall 1406 and has an anti-deposition plate 16 for the bottom wall, an anti-deposition plate 18 for the side wall and the anti-deposition plate 20 for the upper wall. The anti-deposition plate 16 for the bottom wall partitions the chamber 14 into an upper space 14A and a lower space 14B. Between the circumference of the anti-deposition plate 16 for the bottom wall and the side wall 1404, there is a gap S through which air can pass. A crucible 24 storing an evaporation material 22 is supported at the center of the upper surface of the anti-deposition plate 16 for the bottom wall. A holding means 26 for holding a deposition target is positioned at the center of the lower surface of the anti-deposition plate 20 for the upper wall. An electron beam irradiation means 28 for heating, melting and evaporating the evaporation material 22 is placed in the upper part of the chamber 14. A vent 30 for taking in air is formed on the side wall 1404 at a point facing the lower space 14B. COPYRIGHT: (C)2005,JPO&NCIPI</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050915&DB=EPODOC&CC=JP&NR=2005248311A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050915&DB=EPODOC&CC=JP&NR=2005248311A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YAGI KAZUMASA</creatorcontrib><creatorcontrib>KIKUCHI MADOKA</creatorcontrib><title>VACUUM EVAPORATION DEVICE AND METHOD</title><description>PROBLEM TO BE SOLVED: To provide a vacuum evaporation device which can increase productivity and product yield. SOLUTION: A chamber 14 is formed with a bottom wall 1402, a side wall 1404 and an upper wall 1406 and has an anti-deposition plate 16 for the bottom wall, an anti-deposition plate 18 for the side wall and the anti-deposition plate 20 for the upper wall. The anti-deposition plate 16 for the bottom wall partitions the chamber 14 into an upper space 14A and a lower space 14B. Between the circumference of the anti-deposition plate 16 for the bottom wall and the side wall 1404, there is a gap S through which air can pass. A crucible 24 storing an evaporation material 22 is supported at the center of the upper surface of the anti-deposition plate 16 for the bottom wall. A holding means 26 for holding a deposition target is positioned at the center of the lower surface of the anti-deposition plate 20 for the upper wall. An electron beam irradiation means 28 for heating, melting and evaporating the evaporation material 22 is placed in the upper part of the chamber 14. A vent 30 for taking in air is formed on the side wall 1404 at a point facing the lower space 14B. 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SOLUTION: A chamber 14 is formed with a bottom wall 1402, a side wall 1404 and an upper wall 1406 and has an anti-deposition plate 16 for the bottom wall, an anti-deposition plate 18 for the side wall and the anti-deposition plate 20 for the upper wall. The anti-deposition plate 16 for the bottom wall partitions the chamber 14 into an upper space 14A and a lower space 14B. Between the circumference of the anti-deposition plate 16 for the bottom wall and the side wall 1404, there is a gap S through which air can pass. A crucible 24 storing an evaporation material 22 is supported at the center of the upper surface of the anti-deposition plate 16 for the bottom wall. A holding means 26 for holding a deposition target is positioned at the center of the lower surface of the anti-deposition plate 20 for the upper wall. An electron beam irradiation means 28 for heating, melting and evaporating the evaporation material 22 is placed in the upper part of the chamber 14. A vent 30 for taking in air is formed on the side wall 1404 at a point facing the lower space 14B. COPYRIGHT: (C)2005,JPO&NCIPI</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | VACUUM EVAPORATION DEVICE AND METHOD |
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