MANUFACTURING METHOD FOR GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LED

MANUFACTURING METHOD FOR GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LED

PROBLEM TO BE SOLVED: To provide a Group-III nitride compound semiconductor LED, capable of separating the end surface from the device and of forming the electrodes of a Group-III nitride compound semiconductor thin film of the Group-III nitride compound semiconductor LED, without having to use etch...

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1. Verfasser: INOGUCHI KAZUHIKO
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator INOGUCHI KAZUHIKO
description PROBLEM TO BE SOLVED: To provide a Group-III nitride compound semiconductor LED, capable of separating the end surface from the device and of forming the electrodes of a Group-III nitride compound semiconductor thin film of the Group-III nitride compound semiconductor LED, without having to use etching technology. SOLUTION: The manufacturing method for the Group-III nitride compound semiconductor LED comprises a production process of forming a dielectric film on a substrate or Group-III nitride compound semiconductor into a pattern shape; and production process of performing selective growth of the Group-III nitride compound semiconductor thin film, which is the multilayer film of a Group-III nitride compound semiconductor layer on a substrate or the Group-III nitride compound semiconductor, in a way such that the film is thicker than that of the dielectric film; the Group-III nitride compound semiconductor thin film grows wider than the region of the film thickness of the dielectric film; and the end surface having slanting angles at its both ends is formed. COPYRIGHT: (C)2005,JPO&NCIPI
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SOLUTION: The manufacturing method for the Group-III nitride compound semiconductor LED comprises a production process of forming a dielectric film on a substrate or Group-III nitride compound semiconductor into a pattern shape; and production process of performing selective growth of the Group-III nitride compound semiconductor thin film, which is the multilayer film of a Group-III nitride compound semiconductor layer on a substrate or the Group-III nitride compound semiconductor, in a way such that the film is thicker than that of the dielectric film; the Group-III nitride compound semiconductor thin film grows wider than the region of the film thickness of the dielectric film; and the end surface having slanting angles at its both ends is formed. 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subjects BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title MANUFACTURING METHOD FOR GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LED
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