SURFACE PROTECTION FILM FORMATION METHOD FOR REPAIRING TOOL FOR HEAT TREATMENT AND REPAIRING TOOL FOR HEAT TREATMENT
PROBLEM TO BE SOLVED: To provide the surface protection film formation method of a preparing tool for heat treatment for forming the SiC film of a plurality of layers on the surface of a repairing tool for heat treatment so as to sufficiently decrease impurity concentration in the SiC film, especial...
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| creator | KIMURA AKIHIRO MIZUNO MICHIHIKO |
| description | PROBLEM TO BE SOLVED: To provide the surface protection film formation method of a preparing tool for heat treatment for forming the SiC film of a plurality of layers on the surface of a repairing tool for heat treatment so as to sufficiently decrease impurity concentration in the SiC film, especially, the impurity concentration of the uppersurface layer of the SiC film. SOLUTION: The surface protection film formation method of a repairing tool for heat treatment for forming the SiC film of a plurality of layers for protecting the surface of a repairing tool for heat treatment is characterized by forming the SiC film of the plurality of layers, using a CVD furnace different for each layer on the base material of the repairing tool for heat treatment by a CVD method, and at least by forming the SiC layer of the first layer on the base material, and then removing the surface layer of the SiC layer of the first layer before forming the SiC layer of the second layer. COPYRIGHT: (C)2005,JPO&NCIPI |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2005197534A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2005197534A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2005197534A3</originalsourceid><addsrcrecordid>eNrjZCgJDg1yc3R2VQgI8g9xdQ7x9PdTcPP08VVw8w_ydQRzfV1DPPxdQAIKQa4Bjp5Bnn7uCiH-_j5gIQ9XxxCFkCAg6evqF6Lg6OdCWBUPA2taYk5xKi-U5mZQcnMNcfbQTS3Ij08tLkhMTs1LLYn3CjAyMDA1tDQ3NTZxNCZKEQA4njlx</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SURFACE PROTECTION FILM FORMATION METHOD FOR REPAIRING TOOL FOR HEAT TREATMENT AND REPAIRING TOOL FOR HEAT TREATMENT</title><source>esp@cenet</source><creator>KIMURA AKIHIRO ; MIZUNO MICHIHIKO</creator><creatorcontrib>KIMURA AKIHIRO ; MIZUNO MICHIHIKO</creatorcontrib><description>PROBLEM TO BE SOLVED: To provide the surface protection film formation method of a preparing tool for heat treatment for forming the SiC film of a plurality of layers on the surface of a repairing tool for heat treatment so as to sufficiently decrease impurity concentration in the SiC film, especially, the impurity concentration of the uppersurface layer of the SiC film. SOLUTION: The surface protection film formation method of a repairing tool for heat treatment for forming the SiC film of a plurality of layers for protecting the surface of a repairing tool for heat treatment is characterized by forming the SiC film of the plurality of layers, using a CVD furnace different for each layer on the base material of the repairing tool for heat treatment by a CVD method, and at least by forming the SiC layer of the first layer on the base material, and then removing the surface layer of the SiC layer of the first layer before forming the SiC layer of the second layer. COPYRIGHT: (C)2005,JPO&NCIPI</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050721&DB=EPODOC&CC=JP&NR=2005197534A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20050721&DB=EPODOC&CC=JP&NR=2005197534A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIMURA AKIHIRO</creatorcontrib><creatorcontrib>MIZUNO MICHIHIKO</creatorcontrib><title>SURFACE PROTECTION FILM FORMATION METHOD FOR REPAIRING TOOL FOR HEAT TREATMENT AND REPAIRING TOOL FOR HEAT TREATMENT</title><description>PROBLEM TO BE SOLVED: To provide the surface protection film formation method of a preparing tool for heat treatment for forming the SiC film of a plurality of layers on the surface of a repairing tool for heat treatment so as to sufficiently decrease impurity concentration in the SiC film, especially, the impurity concentration of the uppersurface layer of the SiC film. SOLUTION: The surface protection film formation method of a repairing tool for heat treatment for forming the SiC film of a plurality of layers for protecting the surface of a repairing tool for heat treatment is characterized by forming the SiC film of the plurality of layers, using a CVD furnace different for each layer on the base material of the repairing tool for heat treatment by a CVD method, and at least by forming the SiC layer of the first layer on the base material, and then removing the surface layer of the SiC layer of the first layer before forming the SiC layer of the second layer. COPYRIGHT: (C)2005,JPO&NCIPI</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2005</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZCgJDg1yc3R2VQgI8g9xdQ7x9PdTcPP08VVw8w_ydQRzfV1DPPxdQAIKQa4Bjp5Bnn7uCiH-_j5gIQ9XxxCFkCAg6evqF6Lg6OdCWBUPA2taYk5xKi-U5mZQcnMNcfbQTS3Ij08tLkhMTs1LLYn3CjAyMDA1tDQ3NTZxNCZKEQA4njlx</recordid><startdate>20050721</startdate><enddate>20050721</enddate><creator>KIMURA AKIHIRO</creator><creator>MIZUNO MICHIHIKO</creator><scope>EVB</scope></search><sort><creationdate>20050721</creationdate><title>SURFACE PROTECTION FILM FORMATION METHOD FOR REPAIRING TOOL FOR HEAT TREATMENT AND REPAIRING TOOL FOR HEAT TREATMENT</title><author>KIMURA AKIHIRO ; MIZUNO MICHIHIKO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2005197534A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2005</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KIMURA AKIHIRO</creatorcontrib><creatorcontrib>MIZUNO MICHIHIKO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIMURA AKIHIRO</au><au>MIZUNO MICHIHIKO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SURFACE PROTECTION FILM FORMATION METHOD FOR REPAIRING TOOL FOR HEAT TREATMENT AND REPAIRING TOOL FOR HEAT TREATMENT</title><date>2005-07-21</date><risdate>2005</risdate><abstract>PROBLEM TO BE SOLVED: To provide the surface protection film formation method of a preparing tool for heat treatment for forming the SiC film of a plurality of layers on the surface of a repairing tool for heat treatment so as to sufficiently decrease impurity concentration in the SiC film, especially, the impurity concentration of the uppersurface layer of the SiC film. SOLUTION: The surface protection film formation method of a repairing tool for heat treatment for forming the SiC film of a plurality of layers for protecting the surface of a repairing tool for heat treatment is characterized by forming the SiC film of the plurality of layers, using a CVD furnace different for each layer on the base material of the repairing tool for heat treatment by a CVD method, and at least by forming the SiC layer of the first layer on the base material, and then removing the surface layer of the SiC layer of the first layer before forming the SiC layer of the second layer. COPYRIGHT: (C)2005,JPO&NCIPI</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SURFACE PROTECTION FILM FORMATION METHOD FOR REPAIRING TOOL FOR HEAT TREATMENT AND REPAIRING TOOL FOR HEAT TREATMENT |
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