SOLID STATE IMAGE SENSOR, AND MANUFACTURING METHOD THEREOF
PROBLEM TO BE SOLVED: To provide a small-sized highly reliable solid state image sensor and the easily performable and highly reliable manufacturing method thereof whose optical focusing efficiency can be further improved even when making it very fine. SOLUTION: The solid state image sensor has a ph...
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creator | YASUUMI SADAJI |
description | PROBLEM TO BE SOLVED: To provide a small-sized highly reliable solid state image sensor and the easily performable and highly reliable manufacturing method thereof whose optical focusing efficiency can be further improved even when making it very fine. SOLUTION: The solid state image sensor has a photoelectric conversion portion and a charge transferring portion having charge transferring electrodes for transferring the charge generated in the photoelectric conversion portion, and has a light shielding film having an opening in a light receiving region of the photoelectric conversion portion and for covering therewith the sensor. The opening portion is covered with a high-refractive-index film of a columnar-single-layer structure, and the periphery of the high-refractive-index film has a refractive index lower than the high-refractive-index film to cover its surface with a flattened insulating film. COPYRIGHT: (C)2005,JPO&NCIPI |
format | Patent |
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SOLUTION: The solid state image sensor has a photoelectric conversion portion and a charge transferring portion having charge transferring electrodes for transferring the charge generated in the photoelectric conversion portion, and has a light shielding film having an opening in a light receiving region of the photoelectric conversion portion and for covering therewith the sensor. The opening portion is covered with a high-refractive-index film of a columnar-single-layer structure, and the periphery of the high-refractive-index film has a refractive index lower than the high-refractive-index film to cover its surface with a flattened insulating film. 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SOLUTION: The solid state image sensor has a photoelectric conversion portion and a charge transferring portion having charge transferring electrodes for transferring the charge generated in the photoelectric conversion portion, and has a light shielding film having an opening in a light receiving region of the photoelectric conversion portion and for covering therewith the sensor. The opening portion is covered with a high-refractive-index film of a columnar-single-layer structure, and the periphery of the high-refractive-index film has a refractive index lower than the high-refractive-index film to cover its surface with a flattened insulating film. COPYRIGHT: (C)2005,JPO&NCIPI</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | SOLID STATE IMAGE SENSOR, AND MANUFACTURING METHOD THEREOF |
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