MAGNETIC MEMORY CELL, ITS FORMING METHOD, MAGNETIC MEMORY ARRAY, AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a method of forming magnetic memory cells, in which magnetic influence from the ambience is reduced, and magnetic information can be read stably. SOLUTION: The method includes a stage of forming a MTJ element 20A comprising a magnetization free layer 25 covered with...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HONG LIUBO, HAN CHERNGYI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDUCTANCES INFORMATION STORAGE MAGNETS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SEMICONDUCTOR DEVICES STATIC STORES TRANSFORMERS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!